Investigation of Sm Addition on Microstructural and Optical Properties of CoFe Thin Films

Liu, Wen-Jen; Chang, Yung-Huang; Chiang, Chia-Chin; Lai, Jian-Xin; Chen, Yuan-Tsung; Chen, Hsiung-Liang; Lin, Shih-Hung

doi:10.3390/ma16155380

Cited by 2 publications

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References 45 publications

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“…The ferromagnetic material CoFe has good thermal stability, high permeability, and high saturation magnetization, but is highly brittle and has a low coercivity. The magnetic and mechanical properties of CoFe material can be improved by adding different elements to the CoFe alloy [17,18]. The inclusion of some elements such as copper (Cu) and Ni in the synthesized thin films can lead to improvements in corrosion resistance and a decrease in coercivity [19].…”

Section: Introductionmentioning

confidence: 99%

Photoelectrical performances of semiconductor-based devices having CoFe and CoFeNi magnetic interlayers

Yıldız,

Karabulut,

Yıldırım

et al. 2024

Phys. Scr.

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This study was designed to examine the photoelectric device performances of cobalt-iron (CoFe) and cobalt-iron-nickel (CoFeNi) materials with good magnetic properties, specifically to investigate the effect of the Ni element on theelectrical properties. In this context, Al/CoFe/p-Si and Al/CoFeNi/p Si devices were produced by coating both materia- ls between the semiconductor and the metal using the RF sputtering method. First of all, to investigate the structural properties of the coated films, the content analysis was carried out by X-ray diffraction (XRD) analysis. To determine the photoelectrical properties of the produced devices, current-voltage and transient photocurrent measurements were performed and analyzed under different light intensities. It was determined that both devices are sensitive to light, with the sensitivity of the device with the CoFeNi interlayer being much higher. In addition, photocapacitance and photoconductivity measurements were carried out to examine the photocapacitor performance of the devices. As a result of the investigations, both current-voltage, photocurrent, and photo-capacitance/conductivity measurements showed that the device with the CoFeNi interface layer showed better performance than the device with the CoFe interface. Therefore, it has been determined that the Ni element has a positive effect on electrical properties. Additionally, the results obtained show that the prepared materials and produced devices can be used in photovoltaic applications.

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Section: Introductionmentioning

confidence: 99%