Investigation of SiO2 film growth on 4H-SiC by direct thermal oxidation and postoxidation annealing techniques in HNO3 &amp; H2O vapor at varied process durations

Poobalan, Banu; Moon, Jeong Hyun; Kim, Sang-Cheol; Joo, Sung‐Jae; Bahng, Wook; Kang, In Ho; Kim, Nam Kyun; Cheong, Kuan Yew

doi:10.1016/j.tsf.2014.09.039

Cited by 5 publications

(4 citation statements)

References 40 publications

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“…Furthermore, hydrogen species have a large influence on the passivation of electrically active defects near the SiO2/SiC contact [21][22][23]. Nitrogen [13] and hydrogen [22,23] are found to have a significant influence on improvement in oxide growth in SiO2/SiC This clarifies the fact that, in thick gate oxide growth under ideal processing conditions for applications involving high power devices, hydrogen and nitrogen play a significant role as passivation species.…”

Section: Introductionmentioning

confidence: 69%

“…It is noted that for the linear regression and the polynomial regression methods, the thickness difference between estimated and actual values is less than 0.1 and 0 %, respectively. Wet nitridation has been achieved by using nitric acid in direct and post oxidation annealing, combining the benefits of nidridation processes in a wet environment [21,46] as shown in Figure 4. Gate oxide thickness is thicker in samples treated under wet nitration conditions than under other circumstances.…”

Section: Uses Of Sic-mosfet Voltage Rating (V)mentioning

confidence: 99%

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The Modelling of SiC Gate Oxide Thickness based on Thermal Oxidation Temperatures and Durations for High-Voltage Applications

Hashim

Poobalan²,

Zakaria³

et al. 2023

Trends Sci

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This research has shown that the oxide thickness for silicon carbide (SiC) based wide materials can be predicted using regression techniques in wet/dry nitrided or wet/dry non-nitrided thermal oxidation process conditions for high voltage applications by employing 2 different regression techniques: Polynomial and linear regression. The R-squared (R2) and Mean Absolute Percentage Error (MAPE) techniques are used to evaluate the regression models. Furthermore, this work investigates and presents a calculation of gate oxide thickness that is correlated to gate voltage ranges for high voltage applications. In this work, the thermal oxidation process environment is classified into 3 different processing conditions: conventional (dry and wet), dry nitrided (NO,N2O), and wet nitrided (HNO3 vapour). The findings from this study showed that wet oxidation combined with nitrided elements can produce thicker and better-quality gate oxide as compared to conventional dry and wet oxidation techniques. The outcome of this work clearly shows that gate oxide thickness may be derived from silicon carbide-based wide-bandgap materials utilizing linear and polynomial approaches using thermal oxidation durations at different temperatures for high-power applications. The regression models and formulations produced in this work are expected to aid the researchers in determining appropriate oxide thickness under practicable process conditions, with the exception of real thermal oxidation process conditions. Hence, the outcome of this work is expected to save the processing time, material, and cost of the power semiconductor device fabrication technology, mainly for high voltage applications. HIGHLIGHTS Regression approaches are being used to determine the oxide thickness (Tox) for SiC-based broad materials in nitrided and non-nitrided thermal oxidation process conditions for high-voltage applications The regression models are assessed using the R-squared (R2) and Mean Absolute Percentage Error (MAPE) approaches The results of this work are anticipated to reduce processing time, material requirements, and manufacturing costs for power semiconductor devices used in high-voltage applications GRAPHICAL ABSTRACT

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Section: Introductionmentioning

confidence: 69%

Section: Uses Of Sic-mosfet Voltage Rating (V)mentioning

confidence: 99%

The Modelling of SiC Gate Oxide Thickness based on Thermal Oxidation Temperatures and Durations for High-Voltage Applications

Hashim

Poobalan²,

Zakaria³

et al. 2023

Trends Sci

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“…In our previous work, both theory and experiment show that once the interface binding strength exceeds the critical value, the composite failure mode converts from fiber pull-out ductile failure mode to fiber break brittle failure mode and the tensile strength of SiC/SiC drops sharply [ 21 ]. It is worthy to mention that because sufficient SiO 2 filled the pores on the material surface, oxygen atoms prevent further entry into the material [ 22 , 23 ]. It can explain the fact that the tensile strength did not further decrease with time when oxidized at 1200°C above 120 min as shown in Figure 2(a) .…”

Section: Resultsmentioning

confidence: 99%

Influence of Oxidation Damages on Mechanical Properties of SiC/SiC Composite Using Domestic Hi-Nicalon Type SiC Fibers

Jin

Yuan

et al. 2020

Scanning

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Here, we show that when the oxidation treatment temperature exceeded 600°C, the tensile strength of SiC/SiC begins to decrease. Oxidation leads to the damages on the PyC fiber/matrix interface, which is replaced by SiO2 at higher temperature. The fracture mode converts from fiber pull-out to fiber-break as the fiber/matrix interface is filled with SiO2. Oxidation time also plays an important role in affecting the tensile strength of SiC/SiC. The tensile modulus decreases with temperature from RT to 800°C, then increases above 800°C due to the decomposition of remaining CSi x O y and crystallization of the SiC matrix. A special surface densification treatment performed in this study is confirmed to be an effective approach to reduce the oxidation damages and improve the tensile strength of SiC/SiC after oxidation.

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“…The SiO 2 films with different thicknesses used in this study were prepared by thermal oxidation of p-type (100) silicon wafers [39]. The silicon wafers were cut into 20 × 10 mm 2 samples and cleaned to remove impurities and native oxide on the surface by using a conventional Radio Corporation of America (RCA) process and 1% HF.…”

Section: Methodsmentioning

confidence: 99%

Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Zhang

Xing

et al. 2020

Coatings

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SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

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Investigation of SiO2 film growth on 4H-SiC by direct thermal oxidation and postoxidation annealing techniques in HNO3 & H2O vapor at varied process durations

Cited by 5 publications

References 40 publications

The Modelling of SiC Gate Oxide Thickness based on Thermal Oxidation Temperatures and Durations for High-Voltage Applications

The Modelling of SiC Gate Oxide Thickness based on Thermal Oxidation Temperatures and Durations for High-Voltage Applications

Influence of Oxidation Damages on Mechanical Properties of SiC/SiC Composite Using Domestic Hi-Nicalon Type SiC Fibers

Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

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