1991
DOI: 10.1063/1.106035
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Investigation of SiNX:H/Si interface by capacitance method

Abstract: A new capacitance method was developed to investigate properties of the SiNX:H/c-Si interface. By comparison of the frequency dependence of C-V characteristics of p- and n-type c-Si substrate sample pairs, flatband voltage for an intrinsic substrate sample can be determined. Analyses of two kinds of frequency dependence, i.e., the variation of voltage at flatband capacitance and the variation of capacitance at flatband voltage, disclose different aspects of the interface state density with respect to the energ… Show more

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Cited by 6 publications
(6 citation statements)
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“…The second and third equation in (24) can be combined to find the following solution for the breathing mode…”
Section: Compactification Of 11-dimensional Supergravitymentioning
confidence: 99%
See 2 more Smart Citations
“…The second and third equation in (24) can be combined to find the following solution for the breathing mode…”
Section: Compactification Of 11-dimensional Supergravitymentioning
confidence: 99%
“…This manifold can, for example, be a torus T 7 or a product of a Calabi-Yau 3-fold and S 1 . The general equations of motion (24), (25), adapted to the situation of two cosets (with δ = 7 inserted), now read…”
Section: The Example D =mentioning
confidence: 99%
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“…A part of this method has been reported [8]. Here, outlines of the method and the results are presented.…”
Section: Interface State Density At A-sinx:h/c-simentioning
confidence: 96%
“…Among all curvature squared generalizations of Einstein's theory, Lovelock theories therefore have a special status in that they preserve the number of degrees of freedom: a generic curvature squared action yields field equations that are fourth order in the metric, containing thus more degrees of freedom than Einstein's theory. This has generated wide interest in Lovelock theories, especially in the contexts of cosmology and black hole physics [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%