Investigation of silver-induced crystallization of germanium thin films fabricated on different substrates

Kabaçelik, Ismail; Kulakçı, Mustafa; Turan, Raşit

doi:10.1016/j.jcrysgro.2015.02.078

Cited by 16 publications

(17 citation statements)

References 71 publications

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“…4 a XPS spectra of the ITO/Ge heterojunction with ion etching (1-31 min of etching time)-Marked Ge 3d, In3d, Sn 3d and O1 s peaks identify each layer's information. b UPS spectra of the ITO and Gelinear interpolation of each spectra determined the values of V BM , c optical absorption spectra of ITO/glass samplelinear interpolation of (aht) 2 versus htdetermined E g of ITO Table 1 Conduction and valence band offset parameters extracted from XPS and UPS data for the ITO/Ge structure with respect to etching time of Ge. The band bending is a significant characteristic feature of the Schottky like contacts [24].…”

Section: Resultsmentioning

confidence: 99%

“…It describes how well the detector is coupled to the incident radiation. Germanium (Ge) is the most widely used semiconductor in the various types of IR photodetectors due to its transparency at IR region, large carrier mobilities [2], low energy gap value (0.67 eV) and favorable absorption coefficient [3]. Since Ge has a band gap of 0.67 eV, it absorbs photons of wavelengths up to 1800 nm.…”

Section: Introductionmentioning

confidence: 99%

“…Transparent conductive oxides (TCO) have been successfully employed in the photovoltaic industries because of their high electrical conductivity and optical transparency [1][2][3]. Since ITO is well known for its excellent electrical conductivity and AZO for its enhanced optical transparency and thermal stability, they are extensively used in commercial applications such as displays, solar cells and photovoltaic devices [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

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High performing ITO/Ge heterojunction photodetector for broad wavelength detection

Yun

Kumar

Park

et al. 2015

J Mater Sci: Mater Electron

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High-performing photodetector was fabricated by the ITO/Ge heterojunction device. Due to a small bandgap Ge semiconductor, ITO/Ge photodetector showed a significantly high photoresponse for long wavelengths. For ITO/Ge photodetector fabrication, an optically transparent and electrically conductive ITO layer was deposited on a Ge substrate and spontaneously formed a rectifying junction. The HRTEM image revealed the presence of GeO x at the interface of the ITO and Ge. The XPS and UPS studies were carried out to realize the band-offset structure of ITO/Ge photodiode. When the p-type Ge and ITO are brought into contact, the Fermi levels of both the materials are lined up. Besides, the energy bands of Ge are pinned to the Fermi level of the ITO layer at the junction. The band bending effect is depicted from the band offset of the ITO/Ge photodetector. We discuss an effective method of the ITO/Ge heterojunction device fabrication and suggest a strong route for high-performing broad range wavelength (600-900 nm) photodetectors.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High performing ITO/Ge heterojunction photodetector for broad wavelength detection

Yun

Kumar

Park

et al. 2015

J Mater Sci: Mater Electron

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“…As mentioned above, therefore, to take advantage of the superior properties of Ge, poly‐Ge thin films have been investigated as a low‐cost substitute for the expensive single crystalline Ge substrates for large‐area electronic and photovoltaic applications. Recently, several crystallization processes for α ‐Ge have been reported to obtain high quality poly‐Ge films such as solid phase crystallization (SPC), laser annealing, and metal‐induced crystallization (MIC) . However, crystallization of α ‐Ge with SPC process requires high annealing temperature around 500°C, which is too high for inexpensive substrates.…”

Section: Introductionmentioning

confidence: 99%

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

Kabaçelik

Kulakçı

Turan

et al. 2018

Surface & Interface Analysis

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Gold-induced (Au-) crystallization of amorphous germanium (α-Ge) thin films was investigated by depositing Ge on aluminum-doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X-ray diffraction, and scanning electron microscopy. The Raman and X-ray diffraction results indicated that the Au-induced crystallization of the Ge films yielded crystallization at temperature as low as 300°Cfor 1 hour. The amount of crystallization fraction and the film quality were improved with increasing the postannealing temperatures. The scanning electron microscopy images show that Au clusters are found on the front surface of the Ge films after the films were annealed at 500°C for 1 hour. This suggests that Au atoms move toward the surface of Ge film during annealing. The effects of annealing temperatures on the electrical conductivity of Ge films were investigated through current-voltage measurements. The room temperature conductivity was estimated as 0.54 and 0.73 Scm −1 for annealed samples grown on aluminum-doped zinc oxide and glass substrates, respectively. These findings could be very useful to realize inexpensive Ge-based electronic and photovoltaic applications.

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“…Several metals can be used to crystallize the Ge, such as Au, Al, Ag, Ni [13][14][15][16][17][18][19]. However, use of gold as the catalyst [20].…”

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confidence: 99%

Gold‐induced crystallization of amorphous germanium deposited on glass: Bilayer and multilayer films

Bouhadda

Laidoudi

Simon

et al. 2017

Phys. Status Solidi C

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Gold‐induced crystallization (GIC) of amorphous germanium (a‐Ge) using bilayer and multilayer films was performed through electron beam evaporation on glass substrates. The GIC of a‐Ge was studied while the post‐annealing temperature was varied between 250 and 550 °C for a fixed annealing time. The structure of polycrystalline Ge films was investigated by employing X‐ray diffraction (XRD), Raman spectra and scanning electron microscopy (SEM). In both the bilayer and multilayer films the crystallization of a‐Ge took place from 250 °C. The amount of crystallization fractioning and film quality were improved as the annealing temperature increased. However, preferentially (220) oriented crystalline Ge was formed in the bilayer films, indicating a micro‐crystalline structure of the Ge. In the multilayer configuration (111) oriented crystalline Ge was observed indicating a poly‐crystalline structure of the Ge. Scanning electron microscopy (SEM) images clearly highlight the grain size difference between these structures, especially for annealing temperatures above 400 °C.

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Investigation of silver-induced crystallization of germanium thin films fabricated on different substrates

Cited by 16 publications

References 71 publications

High performing ITO/Ge heterojunction photodetector for broad wavelength detection

High performing ITO/Ge heterojunction photodetector for broad wavelength detection

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

Gold‐induced crystallization of amorphous germanium deposited on glass: Bilayer and multilayer films

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