2019
DOI: 10.1088/1757-899x/475/1/012015
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Investigation of semiconducting materials for magnetic field sensors in strong magnetic fields under cryogenic temperatures

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Cited by 2 publications
(3 citation statements)
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“…One can see, that at a low temperature (1.1 K) the quantum oscillations are superimposed on the MR dependence, while they are not observed in Hall voltage dependence due to the presented field range. It is worth mentioning that for sensors applications at cryogenic temperatures, the quantum oscillations can be suppressed by a special nanostructure design [ 114 ]. Vasil’evskii et al [ 114 ] demonstrated that by introducing higher concentration of structure defects in nano-sized heterostructures (InSb/i-GaAs, InAs/i-GaAs) the Shubnikov–de Haas oscillations (SdHO) at cryogenic temperatures (1.5 ÷ 4.2) K could be diminished and linear response of Hall signal is obtained up to 14 T, while the single-crystal whiskers of the same material (InSb, InAs) show distinct SdH oscillations.…”
Section: Linear Magnetoresistance In Silver Chalcogenides and Narrow ...mentioning
confidence: 99%
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“…One can see, that at a low temperature (1.1 K) the quantum oscillations are superimposed on the MR dependence, while they are not observed in Hall voltage dependence due to the presented field range. It is worth mentioning that for sensors applications at cryogenic temperatures, the quantum oscillations can be suppressed by a special nanostructure design [ 114 ]. Vasil’evskii et al [ 114 ] demonstrated that by introducing higher concentration of structure defects in nano-sized heterostructures (InSb/i-GaAs, InAs/i-GaAs) the Shubnikov–de Haas oscillations (SdHO) at cryogenic temperatures (1.5 ÷ 4.2) K could be diminished and linear response of Hall signal is obtained up to 14 T, while the single-crystal whiskers of the same material (InSb, InAs) show distinct SdH oscillations.…”
Section: Linear Magnetoresistance In Silver Chalcogenides and Narrow ...mentioning
confidence: 99%
“…It is worth mentioning that for sensors applications at cryogenic temperatures, the quantum oscillations can be suppressed by a special nanostructure design [ 114 ]. Vasil’evskii et al [ 114 ] demonstrated that by introducing higher concentration of structure defects in nano-sized heterostructures (InSb/i-GaAs, InAs/i-GaAs) the Shubnikov–de Haas oscillations (SdHO) at cryogenic temperatures (1.5 ÷ 4.2) K could be diminished and linear response of Hall signal is obtained up to 14 T, while the single-crystal whiskers of the same material (InSb, InAs) show distinct SdH oscillations. The authors concluded that the heterostructure-based sensors could be used in modern particle accelerators and fusion reactors at strong magnetic fields ( B > 3 T) conditions.…”
Section: Linear Magnetoresistance In Silver Chalcogenides and Narrow ...mentioning
confidence: 99%
“…The sensors online testing results, which were obtained in the much more severe radiation environment, are convincing evidence of the semiconductor sensor parameters high reliability in the ITERrelevant environment. Research of semiconductor InAs/i-GaAs heterostructures, which were carried out in the International Laboratory of High Magnetic Fields and Low Temperatures in Wroclaw, have shown that dependence of Hall EMF on the magnetic field induction has a linear character up to 14 T in a wide temperature range [7]. At the same time, the absence of quantum oscillations, even at 4.2 K, allows us to obtain the high measurement accuracy for sensors based on these materials.…”
Section: Experience In the On-line Testing Of Semiconductor Hall Sens...mentioning
confidence: 99%