Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method

Sadi, Toufik; Kelsall, R. W.; Pilgrim, N. J.

doi:10.1109/ted.2006.885099

Cited by 80 publications

(57 citation statements)

References 25 publications

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“…4. The hot spot is located next to the drain contact for all structures [11]. The shortest structure (L1) exhibits the highest lattice temperature peak of ~566 K, although a smaller voltage is applied than for other structures.…”

Section: Ease Of Use Algan/gan Tlm Heterostructures III Simulatimentioning

confidence: 97%

“…The inverse piezoelectric effect induced decrease in total polarization is caused by the additional stress imposed by the applied electric field on the drain contact. The decrease in total polarization in the heterostructure reduces a 2DEG in the channel, which would reduce the drain current of a transistor in on-conditions [10][11].…”

Section: Ease Of Use Algan/gan Tlm Heterostructures III Simulatimentioning

confidence: 99%

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Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices

Ahmeda

Ubochi

Kálna

et al. 2017

2017 12th European Microwave Integrated Circuits Conference (EuMIC)

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Abstract-The interplay of self-heating and polarization affecting the current is studied in Al0.32Ga0.68N/AlN/GaN/Al0.1Ga0.9N Transmission Line Model (TLM) heterostructures with a scaled source-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental characteristics using an electro-thermal model. The electro-thermal simulations show hot-spots at the edge of the drain contact due to a large electric field affecting the device reliability. Due to the applied electrical stress, the total polarization, relative to the 18 μm heterostructure, decreases by 7 %, 10 % and 17% during a reduction of the source-to-drain distance to the 12 μm, 8 μm, and 4 μm, respectively, as a result of the additional strain induced by electrical stress. This additional stress on source/drain contacts reduces the polarization at the surface as a result of the inverse piezoelectric effect.

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Section: Ease Of Use Algan/gan Tlm Heterostructures III Simulatimentioning

confidence: 97%

Section: Ease Of Use Algan/gan Tlm Heterostructures III Simulatimentioning

confidence: 99%

Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices

Ahmeda

Ubochi

Kálna

et al. 2017

2017 12th European Microwave Integrated Circuits Conference (EuMIC)

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“…Quasi-equilibrium carrier distributions are assumed in the DD model, and hot carrier effects can be included only phenomenologically [5,6]. In this paper we use the ensemble Monte Carlo method, in which the semiclassical Boltzmann transport equation is solved by direct simulation of a large number of electrons and holes [16][17][18]. The most important equations for our MC simulation of LEDs are found in Ref.…”

Section: Theorymentioning

confidence: 99%

Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

et al. 2016

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Hot carrier effects have been observed in recent measurements of IIINitride (III-N) light-emitting diodes (LEDs). In this paper we carry out bipolar Monte Carlo (MC) simulations for electrons and holes in a typical III-N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5k B T corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.

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“…The coupling approach for a simple 2-D electrothermal model is described in [2]. Results are generated for an Al 0.15 Ga 0.85 N/GaN HFET with an n-type buffer (structure I) shown in .…”

Section: Simulation Method Results and Discussionmentioning

confidence: 99%

“…The gate width is 100µm. We apply the same thermal boundary conditions described in [2] at the die surfaces. In structures II and III, the number of electrons flowing into the GaN buffer is reduced.…”

Section: Simulation Method Results and Discussionmentioning

confidence: 99%

Electrothermal Monte Carlo Study of Charge Confinement in GaN HFETs

Sadi

Kelsall

Simulation of Semiconductor Processes and Devices 2007

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An electrothermal Monte Carlo method is applied to study various GaN heterostructures designed to improve electron confinement in the channel of the structures. It is shown that the use of a p-type GaN buffer and the inclusion of a thin InGaN back-barrier below the channel in AlGaN/GaN HFETs improve the device pinch-off characteristics, but increase the influence of self-heating. Results show that the use of an AlGaN exclusion layer at the AlGaN/GaN interface increases both the device currents and temperatures.

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Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method

Cited by 80 publications

References 25 publications

Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices

Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices

Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

Electrothermal Monte Carlo Study of Charge Confinement in GaN HFETs

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