Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field‐plated III‐nitride nano‐HEMT on β‐Ga2O3 substrate
G. Purnachandra Rao,
Trupti Ranjan Lenka,
Nour El. I. Boukort
et al.
Abstract:In this work, a field plated recessed gate III‐nitride HEMT on β‐Ga2O3 substrate is proposed using AlN spacer between AlGaN and GaN layers. The two‐dimensional electron gas (2DEG) transport characteristics, input/output, and RF characteristics of the proposed HEMT with AlN spacer layer of different thickness (1, 2, 3, 4, and 5 nm) are numerically simulated and compared with HEMT without spacer layer. The 2DEG, which is created at the junction of AlGaN/GaN, plays a crucial role in the operation of GaN HEMTs. Wi… Show more
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