Investigation of resistive switching properties in acceptor-induced Sr(Fe,Ti)O3 thin film memristor

Ge, Peng-Zu; Tang, Hui; Huang, Xian-Xiong; Tang, Xin-Gui; Jiang, Yanping; Liu, Qiu-Xiang

doi:10.1016/j.mtcomm.2023.105593

Cited by 2 publications

(1 citation statement)

References 38 publications

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“…GDYO-5 nm (Figure a–c) exhibits relations with the double logarithmic I – V plot in all four states from 0 V → 1 V→ 0 V→ −1 V → 0 V. which is well-matched with the Ohmic and space-charge-limited-conduction (SCLC) mechanisms. The SCLC mechanism relates to three portions of the Ohmic region ( I – V ), trap-unfilled region ( I – V 2 ), and trap-filled region, which are expressed as follows, respectively: ,, J Ohm = q n 0 μ V d J SCLC = 9 8 μ ε V 2 d 3 wherein J , q , n 0 , μ, θ, ε, V , and d are the current density, electric charge, free carrier concentration at equilibrium, mobility, density ratio between n 0 and total carriers, static dielectric constant, applied voltage, and thickness of the switching medium, respectively. In states (i) and (ii), Ohmic conduction (slope ∼ 1.12) covers the HRS state; meanwhile, SCLC conduction in response to switching the device from HRS to LRS (slope ∼ 1.86).…”

Section: Resultsmentioning

confidence: 99%

Insight into Facile Ion Diffusion in Resistive Switching Medium toward Low Operating Voltage Memory

Do,

Bui,

Nguyen

et al. 2024

Nano Lett.

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The rapid increase in data storage worldwide demands a substantial amount of energy consumption annually. Studies looking at low power consumption accompanied by high-performance memory are essential for next-generation memory. Here, Graphdiyne oxide (GDYO), characterized by facile resistive switching behavior, is systematically reported toward a low switching voltage memristor. The intrinsic large, homogeneous pore-size structure in GDYO facilitates ion diffusion processes, effectively suppressing the operating voltage. The theoretical approach highlights the remarkably low diffusion energy of the Ag ion (0.11 eV) and oxygen functional group (0.6 eV) within three layers of GDYO. The Ag/GDYO/Au memristor exhibits an ultralow operating voltage of 0.25 V with a GDYO thickness of 5 nm; meanwhile, the thicker GDYO of 29 nm presents multilevel memory with an ON/OFF ratio of up to 10 4 . The findings shed light on memory resistive switching behavior, facilitating future improvements in GDYO-based devices toward opto-memristors, artificial synapses, and neuromorphic applications.

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