Investigation of resistive switching behaviors of cuprous phosphide thick film

Chen, Manru; Lv, Yanfei; Guo, Xin; Peng, Xue; Xi, Junhua; Fu, Li; Zhao, Shichao

doi:10.1016/j.jallcom.2023.172641

Cited by 3 publications

(2 citation statements)

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“…Apart from oxide materials, various other inorganic materials, including nitrides [ 89 ], sulphides [ 99 ], phosphides [ 100 ], tellurides [ 101 ], and chalcogenides [ 102 ], have also been studied for their synaptic functionalities. S. Kim et al [ 89 ] demonstrated various synaptic responses, including LTP, LTD, and STDP, by adjusting the pulse amplitudes and timing sequence of the pre- and post-spikes applied to a silicon nitride (SiN x )-based memristor device (see Figure 5 h–j).…”

Section: Resistive Switching Materials and Applicationsmentioning

confidence: 99%

“…In addition to the LTP and STP responses, the device could successfully replicate dynamic neural functions like memorizing and forgetting. M. Chen et al [ 100 ] reported a cuprous phosphide (Cu 3 P) based RRAM device with a high ON/OFF ratio of

using a nickel top electrode. The switching mechanism was reported to be due to the redox reactions involving Cu 2+ and P 3− ions at the electrode interfaces.…”

Section: Resistive Switching Materials and Applicationsmentioning

confidence: 99%

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Resistive Switching Devices for Neuromorphic Computing: From Foundations to Chip Level Innovations

Udaya Mohanan

2024

Nanomaterials

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Neuromorphic computing has emerged as an alternative computing paradigm to address the increasing computing needs for data-intensive applications. In this context, resistive random access memory (RRAM) devices have garnered immense interest among the neuromorphic research community due to their capability to emulate intricate neuronal behaviors. RRAM devices excel in terms of their compact size, fast switching capabilities, high ON/OFF ratio, and low energy consumption, among other advantages. This review focuses on the multifaceted aspects of RRAM devices and their application to brain-inspired computing. The review begins with a brief overview of the essential biological concepts that inspire the development of bio-mimetic computing architectures. It then discusses the various types of resistive switching behaviors observed in RRAM devices and the detailed physical mechanisms underlying their operation. Next, a comprehensive discussion on the diverse material choices adapted in recent literature has been carried out, with special emphasis on the benchmark results from recent research literature. Further, the review provides a holistic analysis of the emerging trends in neuromorphic applications, highlighting the state-of-the-art results utilizing RRAM devices. Commercial chip-level applications are given special emphasis in identifying some of the salient research results. Finally, the current challenges and future outlook of RRAM-based devices for neuromorphic research have been summarized. Thus, this review provides valuable understanding along with critical insights and up-to-date information on the latest findings from the field of resistive switching devices towards brain-inspired computing.

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Section: Resistive Switching Materials and Applicationsmentioning

confidence: 99%

using a nickel top electrode. The switching mechanism was reported to be due to the redox reactions involving Cu 2+ and P 3− ions at the electrode interfaces.…”

Section: Resistive Switching Materials and Applicationsmentioning

confidence: 99%

Resistive Switching Devices for Neuromorphic Computing: From Foundations to Chip Level Innovations

Udaya Mohanan

2024

Nanomaterials

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Synthesis of Copper Sulfides by Anion Substitution and their Resistive Switching Properties in the Presence of Cuprou‘s

Chen,

Guo,

et al. 2024

ChemistrySelect

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Copper sulfides exhibit various significant physical properties and have wide potential applications. In order to synthesize copper sulfides and investigate the anion substitution possibility of Cu3P, we immersed Cu3P in sodium sulfide solution. From X‐ray diffraction spectra results, copper sulfides, namely Cu2S and Cu7.2S4, were observed, indicating that anion substitution between S2− and P3− ions did occur. Consequently, we investigated the resistive switching (RS) properties of these two phases in the presence of Cu3P. We found that the Cu2S‐Cu3P composite exhibited a high Off/On ratio (88) and a long retention time (>103 s). However, the Cu7.2S4‐Cu3P composite exhibited no RS performance. In addition, we discussed the conduction and resistive switching mechanisms. Our work enriches the preparation method of copper sulfides and provides a reference for enhancing RS performance.

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