Investigation of Resistance Switching and Synaptic Properties of VO_x for Neuromorphic Applications

Abstract

The taking run on artificial intelligence in the last decades is based on the von Neumann architecture where memory and computation units are separately located from each other. This configuration causes a large amount of energy and time to be dissipated during data transfer between these two units, in contrast to synapses in biological neurons. A new paradigm has been proposed inspired by biological neurons in human brains, known as neuromorphic computing. Due to the unusual current−voltage characteristic of memristor devices such as pinched hysteresis loops, memristors are considered a key element of neuromorphic architecture. In this study, we report the basic current−voltage characteristic of the memristor devices in the form of Si/SiO 2 /Pt(30 nm)/VO x (3, 13, 25 nm)/Pt (30 nm) sandwich structure. Synaptic functions such as spike-time-dependent plasticity (STDP), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD) of memristor devices were examined in detail. The oxide layer VO x has been grown by using the VO 2 target in a pulsed laser deposition (PLD) chamber. The composition and oxidation states of the oxide layer were examined using the X-ray photoelectron spectroscopy (XPS) technique. The status of oxygen vacancies, which play an active role in the operation of the devices, was examined with a photoluminescence (PL) technique. The experimental results showed that the thickness of the oxide layer can significantly influence the synaptic and resistive switching properties of the devices.