Abstract:The influence of a quartz side wall on plasma production was studied in a large-area surface wave plasma source. An enhanced plasma production was observed in the vicinity of the quartz side wall and is explained by the propagation of the surface wave coupled from the bottom quartz plate to the quartz side wall. This was confirmed by measuring the electromagnetic field intensity and the wavelength of the surface wave propagating along the side wall. Additionally, the plasma density was obtained by two differen… Show more
“…The non-uniformity of the large-area microwave plasma is attributed to the fact that the typical chamber diameter is significantly longer than the wavelength of the microwave (∼12.2 cm for 2.458 GHz). [6][7][8][9][10] Previous studies 11,12) have proposed rotating microwave fields with TE 111 mode to enhance the plasma uniformity by imposing the phase difference between the two orthogonally placed microwave sources or by modulating the field amplitude of the microwave sources.…”
Microwave surface-wave plasma (SWP) provides relatively higher ion density and radical species density than RF plasma, making it a promising plasma source for semiconductor fabrication. However, its plasma uniformity is compromised due to the non-uniform field distribution as the microwave wavelength is typically shorter than chamber dimensions. This could be a bottleneck as to the practical application of SWP in semiconductor fabrication demanding a large-area plasma with a high uniformity. In this work, we propose field agitation by applying the phase difference of 0° and 180° between two input microwaves in the chamber to enhance the plasma uniformity. The chamber, optimized for the TM_130 mode at 2.458 GHz, successfully produces a large-area SWP with a diameter of 450 mm with 800 W absorption power and 200 mTorr argon pressure. The measurement results show that the system is capable of yielding enhanced uniformity of large-area SWP while maintaining high ion density.
“…The non-uniformity of the large-area microwave plasma is attributed to the fact that the typical chamber diameter is significantly longer than the wavelength of the microwave (∼12.2 cm for 2.458 GHz). [6][7][8][9][10] Previous studies 11,12) have proposed rotating microwave fields with TE 111 mode to enhance the plasma uniformity by imposing the phase difference between the two orthogonally placed microwave sources or by modulating the field amplitude of the microwave sources.…”
Microwave surface-wave plasma (SWP) provides relatively higher ion density and radical species density than RF plasma, making it a promising plasma source for semiconductor fabrication. However, its plasma uniformity is compromised due to the non-uniform field distribution as the microwave wavelength is typically shorter than chamber dimensions. This could be a bottleneck as to the practical application of SWP in semiconductor fabrication demanding a large-area plasma with a high uniformity. In this work, we propose field agitation by applying the phase difference of 0° and 180° between two input microwaves in the chamber to enhance the plasma uniformity. The chamber, optimized for the TM_130 mode at 2.458 GHz, successfully produces a large-area SWP with a diameter of 450 mm with 800 W absorption power and 200 mTorr argon pressure. The measurement results show that the system is capable of yielding enhanced uniformity of large-area SWP while maintaining high ion density.
Abstract-In the following, numerical and experimental results for a line-shaped argon plasma source over a wide range of gas pressure (2-50 Torr) and microwave power (200-800 W) are presented. The line-shaped plasmas have been generated in a rectangular Pyrex tube, 15 mm in height and 5 mm inner width placed-in a linear slot made in the upper wide wall of a custom-made narrow rectangular waveguide. The microwave power is coupled to the discharge gas via the slot. The effects of the waveguide width, power level (electron density, and discharge tube insertion depth on the excited axial (along x) electric field profile and hence the uniformity of the produced plasmas are investigated numerically using commercial software CST Microwave Studio R , and charge coupled device (CCD) camera. Results showed that, a uniform line-shaped plasma is generated as waveguide width decreased to 58 mm, plasma density value n res = 3.7 × 10 11 cm −3 , and discharge tube insertion depth = 0 mm. An optical emission spectroscopy study was also realized to deduce the relative density of argon species and electron excitation temperature T exc . In general, argon spectral lines intensity was increased enhanced markedly when microwave power increased, while the different lines showed different behavior as argon pressure increased. The electron excitation temperature T exc decreases with increasing argon pressure, but almost constant overall the whole plasma length.
In this paper, a flat-type surface wave plasma (SWP) source generated by microwave discharg is introduced systematically. The principle of the surface wave plasma is analyzed and the energy absorption mechanism of the surface wave plasma discharge is explored. A novel wave-mode converter composed of the single-mode resonator array, sub-wavelength diffraction grating and a new type of slot antenna array is introduced. The research findings, such as the mechanism of the generation, the realization, the characteristics of plasma parameters and the numerical simulation of the new SWP sources are beneficial to industrial applications, will promote the effectiveness of the microelectronics industry and obtain a new breakthrough.
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