Investigation of PtSi/p-Si Schottky barrier height using I-V-T technique

Electrochemical surface reconstructed Ptx(x=2,3)Si/PtSi/p-Si photocathodes for achieving high efficiency in photoelectrochemical H2 generation

“…The SBH of the MS junction formed by the PtSi and Si should theoretically be 0.21 eV without the DS process. [28][29][30] With the DS treatment, this value increases approximately 0.7 eV, beneting from the deformation of the electric eld at the interface between PtSi and p-Si. [31][32][33] The concentration distribution of the dopant P atoms in DS PtSi/p-Si was investigated by secondary ion mass spectroscopy (SIMS), and the results are shown in Fig.…”

Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

“…Schottky diodes modeled by dominant thermionic emission (TE) current are common in literature [30], [31]. Modeling the detectors as single Schottky diodes dominated by thermionic emission provides a first-order estimation of device parameters; these parameters can be extracted using a single current-voltage characteristic or current-voltage data over a range of temperatures; each method has advantages and limitations.…”

Initial Stages of Platinum Silicide Formation on Si(110) Studied by Scanning Tunneling Microscopy

“…PtSi/n-Si junction is known to have one of the highest potential barrier of $0:87 eV, 1) which can be used in production of Schottky diodes. On the other hand, PtSi/p-Si junction have one of the smallest barrier of $0:2 eV, 2) making it suitable for infrared detectors 3) and ohmic junctions. Pt and PtSi are catalytic materials for chemical reactions and can be used in production of gas neutralization systems and biosensors.…”