Investigation of possible dynamic polarization effects on the transmission probability of n-GaAs/AlxGa1−xAs/n-GaAs tunnel barriers

Guéret, P.; Marclay, E.; Meier, H. P.

doi:10.1016/0038-1098(88)90408-5

Cited by 55 publications

(15 citation statements)

References 2 publications

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“…Once again it should be noted that for doped semiconductors with low current carrier densities and small respective plasma frequencies w pi the perturbation theory may fail, although not necessarily. In this connection the experiments [135,136] seem to be a direct proof of such a failure. However, it might not be the case.…”

Section: Vacuum Slab Between Semiconductorsmentioning

confidence: 79%

“…As an example, one can mention calculations of electronic levels in semiconductor quantum superlattices [80,82,87,99,100] or metal-insulator-semiconductor structures [79,95], as well as impurity energy levels [82,84]. Tunnel currents in layered structures [135][136][137][138] should be investigated (see also Refs. [71,75]) with allowance for dielectric interface continuity instead of the classical mismatch between dielectric constants.…”

Section: Discussionmentioning

confidence: 99%

“…So, instead of the perturbation approach, more sophisticated methods should be applied [13,14,23]. Such dynamic phenomena might have already been observed in semiconducting heterostructures [135,136].…”

Section: Discussionmentioning

confidence: 99%

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Dynamical Image Forces near Semiconductor-Vacuum Interfaces and in Vacuum Interlayers between Semiconductors

Gabovich

Розенбаум

Войтенко

2001

phys. stat. sol. (b)

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Dynamical image force (polarization) energies WðzÞ induced by charged particles moving perpendicular to the vacuum-semiconductor interface or in the vacuum slab between semiconductors have been calculated on the basis of the perturbation theory developed by the authors earlier. The cases of the uniform and uniformly accelerated motions are treated as an example. The adopted dielectric approach takes into account both spatial and temporal dispersions of the electrode dielectric functions eðk; wÞ. It is shown that the quantum-mechanical character of the k-dependence of eðk; wÞ leads to a smoother WðzÞ dependence than in the semiclassical case. It is also demonstrated that the proper account of the quantum-mechanical screening behavior leads to a drastic reduction of the dynamical corrections to the static image forces. For reasonable values of the relevant parameters of the problem it is sufficient to retain only the first dynamical term of the perturbation series. Thus, the use of the expansion method is justified for multilayer semiconductor structures.

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Section: Vacuum Slab Between Semiconductorsmentioning

confidence: 79%

Section: Discussionmentioning

confidence: 99%

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Dynamical Image Forces near Semiconductor-Vacuum Interfaces and in Vacuum Interlayers between Semiconductors

Gabovich

Розенбаум

Войтенко

2001

phys. stat. sol. (b)

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“…This subject has been covered in a number of reviews (Hauge and Støvneng [2], 1989; Olkholovsky and Recami [3], 1992; Landauer and Martin [4], 1994 and Chiao and Steinberg [5], 1997). The fact that there is a time related to the tunneling process has been observed experimentally [6][7][8][9][10][11][12][13][14]. However, the results of the experiments are ambiguous.…”

Section: Introductionmentioning

confidence: 99%

Possibility of tunneling time determination

Ruseckas

2001

Phys. Rev. A

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We show that it is impossible to determine the time a tunneling particle spends under the barrier. However, it is possible to determine the asymptotic time, i.e., the time the particle spends in a large area including the barrier. We propose a model of time measurements. The model provides a procedure for calculation of the asymptotic tunneling and reflection times. The model also demonstrates the impossibility of determination of the time the tunneling particle spends under the barrier. Examples for δ-form and rectangular barrier illustrate the obtained results. 03.65.Xp, 03.65.Ta, 03.65.Ca, 73.40.Gk

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“…As an example the case of coupling of a tunneling particle to a photonic environment is the basis of three such fields: that of dynamic image potential [2], Coulomb blockade [3] and dissipative macroscopic quantum tunneling (MQT) of Josephson phase [4]. The development of experimental techniques through which different effects now become within the scope of experimental verification [5] is a source of enhanced interest in such problems.…”

Section: Introductionmentioning

confidence: 99%

Phonon-coupled electron tunneling in two- and three-dimensional tunneling configurations

Pazy

Laikhtman

2000

Phys. Rev. B

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We treat a tunneling electron coupled to acoustical phonons through a realistic electron-phonon interaction: deformation potential and piezoelectric coupling, in two-or three-dimensional tunneling configurations. Making use of the slowness of the phonon system compared to electron tunneling, and using a Green function method for imaginary time, we are able to calculate the change in the transition probability due to the coupling to phonons. It is shown using standard renormalization procedure that, contrary to the one-dimensional case, second-order perturbation theory is sufficient in order to treat the deformation potential coupling, which leads to a small correction to the transmission coefficient prefactor. In the case of piezoelectric coupling, which is found to be closely related to the piezoelectric polaron problem, vertex corrections need to be considered. Summing leading logarithmic terms, we show that the piezoelectric coupling leads to a significant change of the transmission coefficient.

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Investigation of possible dynamic polarization effects on the transmission probability of n-GaAs/AlxGa1−xAs/n-GaAs tunnel barriers

Cited by 55 publications

References 2 publications

Dynamical Image Forces near Semiconductor-Vacuum Interfaces and in Vacuum Interlayers between Semiconductors

Dynamical Image Forces near Semiconductor-Vacuum Interfaces and in Vacuum Interlayers between Semiconductors

Possibility of tunneling time determination

Phonon-coupled electron tunneling in two- and three-dimensional tunneling configurations

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