Investigation of photodoping kinetics in amorphous Ge-chalcogenides

Ressel, Rüdiger; Kluge, G.; Süptitz, P.

doi:10.1016/0022-3093(87)90298-5

Cited by 10 publications

(3 citation statements)

References 5 publications

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“…The holes so created are trapped by the metal to form ions while the electrons diffuse into the chalcogenide film. The resulting electric field is sufficient to allow the ions to overcome the energy barrier at the interface and move into the chalcogenide [72,73]. This leads to the formation of an interfacial monolayer of a Ag + rich phase [74,75] which supplies the metal ions deep into the film, driven by drift and diffusion.…”

Section: Materials Systemsmentioning

confidence: 99%

“…In addition to the possibility of phase separation, the diffusion of metal into chalcogenide glasses or oxides from a surface source can produce a concentration gradient of metal in the base glass from the top to the bottom of the film so that there is a relatively lightly doped region near the bottom electrode. Photodiffusion can create a naturally layered (high/ low doped) structure as the photo-induced field enhancement effect tends to lead to a diffusion concentration profile with a step-like rather than Gaussian decrease in concentration at its front [73]. Such layering is evident from impedance spectroscopy (IS) studies of both Ag-Ge-Ch [83,84] and Cu-SiO 2 [85] systems prepared via photodiffusion and thermal diffusion respectively.…”

Section: Non-homogeneous and Layered Electrolytesmentioning

confidence: 99%

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Conductive bridging random access memory—materials, devices and applications

Kozicki¹,

Barnaby²

2016

Semicond. Sci. Technol.

101

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We present a review and primer on the subject of conductive bridging random access memory (CBRAM), a metal ion-based resistive switching technology, in the context of current research and the near-term requirements of the electronics industry in ultra-low energy devices and new computing paradigms. We include extensive discussions of the materials involved, the underlying physics and electrochemistry, the critical roles of ion transport and electrode reactions in conducting filament formation and device switching, and the electrical characteristics of the devices. Two general cation material systems are given-a fast ion chacogenide electrolyte and a lower ion mobility oxide ion conductor, and numerical examples are offered to enhance understanding of the operation of devices based on these. The effect of device conditioning on the activation energy for ion transport and consequent switching speed is discussed, as well as the mechanisms involved in the removal of the conducting bridge. The morphology of the filament and how this could be influenced by the solid electrolyte structure is described, and the electrical characteristics of filaments with atomic-scale constrictions are discussed. Consideration is also given to the thermal and mechanical environments within the devices. Finite element and compact modelling illustrations are given and aspects of CBRAM storage elements in memory circuits and arrays are included. Considerable emphasis is placed on the effects of ionizing radiation on CBRAM since this is important in various high reliability applications, and the potential uses of the devices in reconfigurable logic and neuromorphic systems is also discussed.

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Section: Materials Systemsmentioning

confidence: 99%

Section: Non-homogeneous and Layered Electrolytesmentioning

confidence: 99%

Conductive bridging random access memory—materials, devices and applications

Kozicki¹,

Barnaby²

2016

Semicond. Sci. Technol.

101

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“…Kawasaki et al 3) reported a large jump in ionic conductivity at the composition around x = 0.3 for Ag x (GeSe 3 ) 1-x , which may support a percolation threshold of the conducting path behavior in the glassy network. 4,5) Recently Naoaki Kuwata et al 6) observed, by scanning electron microscopy, micro phase-separation in Ag x (GeSe 3 ) 1-x system at room temperature between GeSe 3 almost not including Ag ions and Ag x (GeSe 3 ) 1-x with Ag-rich composition of x ~ 0.565.…”

Section: Introductionmentioning

confidence: 99%

Structural Study of Ag–Ge–Se Superionic Glass

et al. 2010

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Structural analysis of superionic glass Ag 0.5 (GeSe 3 ) 0.5 and in its molten state was performed by high-energy x-ray diffraction and neutron diffraction measurements at 110 and 300 K for the amorphous, 503 K for the supercooled-liquid state and 1223 K for molten state. Three-dimensional structural model at each temperature was obtained by means of reverse Monte Carlo (RMC) structural modelling on the basis of both diffraction data at 110 and 300K and X-ray data at 503 and 1223 K. It was revealed that the Ag distribution in Ag 0.5 (GeSe 3 ) 0.5 glass has a tendency to form chain-like fragments even in the molten state. With decreasing temperature from the molten state, medium-range order as well as local order appears with extended large fluctuations in Ag distribution.

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Optically‐Induced Diffusion and Dissolution of Metals in Amorphous Chalcogenides

Wágner

Frumar

2003

Photo‐Induced Metastability in Amorphous Semiconductors

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Investigation of photodoping kinetics in amorphous Ge-chalcogenides

Cited by 10 publications

References 5 publications

Conductive bridging random access memory—materials, devices and applications

Conductive bridging random access memory—materials, devices and applications

Structural Study of Ag–Ge–Se Superionic Glass

Optically‐Induced Diffusion and Dissolution of Metals in Amorphous Chalcogenides

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