Influence of oxygen vacancy (V O•• ) distribution on the polarization properties of SrRuO 3 (SRO)/BiFeO 3 (BFO)/SRO capacitors was investigated. Our thin-film experiments and density function theory (DFT) calculations reveal that a strong attractive interaction between V O •• and the bottom BFO/SRO interface gives rise to an V O •• -rich defective layer for as-deposited capacitors. The distribution with the V O •• -rich layer is gradually broken by an electrical training and finally becomes symmetric, leading to a polarization-hysteresis change from a markedly rounded to a typical ferroelectric loop. This study demonstrates that defect engineering utilizing V O •• is an effective approach to control the polarization-related properties of BFO in capacitor form.