Investigation of pad staining and its effect on removal rate in copper chemical mechanical planarization

Lee, H.; Zhuang, Yun; Borucki, L.; Joh, S.; O'Moore, Fergal; Philipossian, Ara

doi:10.1016/j.tsf.2010.07.015

Thin Solid Films

2010

DOI: 10.1016/j.tsf.2010.07.015

|View full text |Cite

Investigation of pad staining and its effect on removal rate in copper chemical mechanical planarization

H. Lee

Yun Zhuang

L. Borucki³

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2015

2018

Publication Types

Select...

Article3

Relationship

Self Cite1

Independent2

Authors

Journals

Cited by 3 publications

(1 citation statement)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…11 For copper CMP, it has been widely observed that material removal rate across the wafer is non-uniform. [12][13][14][15][16] The variation in material removal rate across wafer surface impacts WIWRRNU and resolving this issue continues to be an area of intense focus in the industry.…”

mentioning

confidence: 99%

Pad Surface Thermal Management during Copper Chemical Mechanical Planarization

Sampurno

Liao

et al. 2015

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

A pad surface thermal management system was developed to improve copper removal rate within wafer non-uniformity by locally adjusting the pad surface temperature. The system consisted of one or more thermal transfer modules, which contacted the pad surface during polishing. Hot or cold water circulated between the thermal transfer module and an external heater or cooler. With the module placed on the pad surface, heat conduction occurred between the module and the pad surface, producing a localized pad surface with higher or lower temperatures. As such, it was expected that local removal rates would change accordingly due to the temperature-sensitive nature of copper chemical mechanical planarization (CMP). In this study, the system was used to adjust the “center-fast” removal rate profile to illustrate its effect during the process. Results showed that, when two thermal transfer modules were employed, local removal rates in the wafer center region decreased significantly while the removal rates near the wafer edge were maintained thereby significantly improving within wafer removal rate non-uniformity.

show abstract

mentioning

confidence: 99%

Pad Surface Thermal Management during Copper Chemical Mechanical Planarization

Sampurno

Liao

et al. 2015

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization

Jia¹,

Liu²,

Wang³

et al. 2015

J. Semicond.

View full text Add to dashboard Cite

The article studied the electrochemical behavior of P2 alkaline polishing slurry. The main research is the changing discipline of Ecorr and Icorr in the Cu electrolyte at different concentrations of oxidant H2O2. It compares potentiodynamic polarization curves in different P2 slurries and analyzes the passivation function of H2O2 acting on controlling dishing. The result implies that the potential increases gradually and then levels off while the current density on the contrary decreases with the augment of H2O2 concentration. In addition, dishing declines with the increasing of H2O2 along with the optimization of planarization of the alkaline P2 slurry.

show abstract

The Model of the Process of the Chemical Mechanical Polishing of the Copper Metallization, Based on the Formation of the Passivation Layer

Makhviladze

Sarychev

2018

Russ Microelectron

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Investigation of pad staining and its effect on removal rate in copper chemical mechanical planarization

Cited by 3 publications

References 5 publications

Pad Surface Thermal Management during Copper Chemical Mechanical Planarization

Pad Surface Thermal Management during Copper Chemical Mechanical Planarization

Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization

The Model of the Process of the Chemical Mechanical Polishing of the Copper Metallization, Based on the Formation of the Passivation Layer

Contact Info

Product

Resources

About