In this paper, we have experimentally investigated the theoretical predictions of V O -Zn i to be a native donor in ZnO. Intrinsically zinc-rich n-type ZnO thin films having N D ∼ 6.23 × 10 18 cm −3 grown by molecular beam epitaxy on Si (0 0 1) substrate were annealed in oxygen environment at 500-800• C, keeping a step of 100• C for 1 h, each. Room temperature Hall measurements demonstrated that free donor (V O -Zn i ) concentration decreased exponentially and Arrhenius plot yielded activation energy to be 1.2 ± 0.01 eV. This value is in agreement with theoretically reported activation energy of V O -Zn i donor complex in ZnO. We argue; this observation can be explained by two-step process: (i) incoming oxygen fills V O of V O -Zn i complex leaving behind Zn i ; (ii) Zn i releases its energy and moves to a lower energy state with respect to the conduction band minima and/or occupies an inactive location. Consequently, Zn i -V O complex loses its donor role in the lattice. Our experimental data supported theoretical predictions of V O -Zn i to be a native donor. Results from photoluminescence spectroscopy carried out on Zn-rich ZnO additionally justify the existence of V O -Zn i complex.