Investigation of optical parameters of Ag–In–Se thin films deposited by e-beam technique

Çolakoğlu, T.; Parlak, M.; Özder, Serhat

doi:10.1016/j.jnoncrysol.2008.03.014

Cited by 26 publications

(21 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At higher energies, the increased slope of the Cu(In,Ga)Se2 control is attributed to the non-degenerate valence band splitting of chalcopyrite materials [9]. It is not known at this time whether the differences in curve shape and slope of the two samples can be attributed to changes in band splitting, due to crystal-field and spin-orbit splitting, a reduction in defects, a combination of both, or other effects.…”

Section: Resultsmentioning

confidence: 99%

“…The optical bandgap was determined from the transmission and reflection data using a standard analytical procedure [9]. The absorption coefficient (α) was determined using Equation (1): [10] …”

Section: Resultsmentioning

confidence: 99%

“…The bandgap was determined by plotting (αhν) 2 vs. hν and performing a linear fit of the data. This assumes that the fundamental optical transition is due to a direct allowed transition in all cases [9]. Sample curves are shown in Figure 2 for two x = 0.3 samples (w = 0 and 1).…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se<inf>2</inf> absorber layers

Boyle

Hanket

Shafarman

2009

2009 34th IEEE Photovoltaic Specialists Conference (PVSC)

View full text Add to dashboard Cite

ABSTRACT(Ag,Cu)(In,Ga)Se2 thin films have been deposited by elemental co-evaporation over a wide range of compositions and their optical properties characterized by transmission and reflection measurements and by relative shift analysis of quantum efficiency device measurements. The optical bandgaps were determined by performing linear fits of (αhν) 2 vs. hν, and the quantum efficiency bandgaps were determined by relative shift analysis of device curves with fixed Ga/(In+Ga) composition, but varying Ag/(Cu+Ag) composition. The determined experimental optical bandgap ranges of the Ga/(In+Ga) = 0.31, 0.52, and 0.82 groups, with Ag/(Cu+Ag) ranging from 0 to 1, were 1.19-1.45 eV, 1.32-1.56 eV, and 1.52-1.76 eV, respectively. The optical bowing parameter of the different Ga/(In+Ga) groups was also determined.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se<inf>2</inf> absorber layers

Boyle

Hanket

Shafarman

2009

2009 34th IEEE Photovoltaic Specialists Conference (PVSC)

View full text Add to dashboard Cite

show abstract

“…The absence of diffraction peak in the X-ray patterns (within the investigated 2θ range and in the limit of XRD device detection) confirms the expected amorphous nature. above the weak and free absorption regions (i.e., strong absorption region 500-750 nm) the maxima (respectively minima) of the interference fringes of the reflectance spectrum, occurs at the same wavelength positions of the corresponding one of the transmittance spectrum, that gives some sound indication about the optical homogeneity of the deposited thin films [19,20]. The optical properties of the deposited films may be represented by the refractive index, n, and extinction coefficient, k, which are the real and imaginary parts of the complex refractive index, N ¼ n À ik.…”

Section: Structural Characterizationmentioning

confidence: 96%

Structural characterization and optical properties of pulsed laser deposition of Se75Te25 and Se75Te17Ge8 amorphous thin films

Salim

Lahmar

Zayied

et al. 2015

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

“…A decrease in E g with increasing annealing temperature for SrTiO 3 thin films and AgInSe thin films were reported in Refs. [43,44], due to the increase in the energy widths of the band tail states, quantum-size effects and the existence of an amorphous phase. Therefore, it is believed that both the increase in crystallite size and the reduction in amorphous phase amount are responsible for the bandgap decreasing in the annealed CuIn 0 7 Ga 0 3 (Se 1−x Te x 2 films.…”

Section: Optical Propertiesmentioning

confidence: 99%

Optical and Structural Properties of Nanostructured CuIn0.7Ga0.3(Se(1−x)Tex)2 Chalcopyrite Thin Films—Effect of Stoichiometry and Annealing

Fiat¹,

Polat²,

Bacaksız³

et al. 2014

j. nanosci. nanotech.

View full text Add to dashboard Cite

The aim of this work was to study the dependence of the optical, structural and morphological properties of CuIn0.7Ga0.3(Se(1-x)Te(x))2 (briefly CIGSeTe) thin films for two different stoichiometries (for x = 0.2 and 0.8). The films have been deposited onto soda lime glass (SLG) substrates by the e-beam evaporation technique. The films showed high absorption and revealed optical band gaps ranging from 1.17 eV to 1.06 eV for x = 0 with highest annealing temperatute at 525 degrees C and 1.12 eV to 1.02 eV for x = 0.8 and with highest annealed temperature at 600 degrees C. These results were correlated with the microstructural analysis by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and X-ray diffractometry (XRD). The linear dependence of the lattice parameters as a function of Se and Te contents was examined. X-ray diffraction analyses showed that the films had the single phase chalcopyrite structure. The lattice parameters (a and c) varied linearly with the increase in Te content x from x = 0.2 to x = 0.8. The peak correspondng to the (1 1 2) plane orientation of the films increased with annealing process. Also, SEM images showed that both the grains size and the RMS (root mean square) values increased with annealing and higher Te amount that caused grains aggregation. The relative 600 degrees C elemental composition present in the deposited CIGS films have been measured by using energy dispersive X-ray analysis (EDX).

show abstract

Investigation of optical parameters of Ag–In–Se thin films deposited by e-beam technique

Cited by 26 publications

References 27 publications

Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se<inf>2</inf> absorber layers

Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se<inf>2</inf> absorber layers

Structural characterization and optical properties of pulsed laser deposition of Se75Te25 and Se75Te17Ge8 amorphous thin films

Optical and Structural Properties of Nanostructured CuIn<SUB>0.7</SUB>Ga<SUB>0.3</SUB>(Se<SUB>(1−<I>x</I>)</SUB>Te<SUB><I>x</I></SUB>)<SUB>2</SUB> Chalcopyrite Thin Films—Effect of Stoichiometry and Annealing

Contact Info

Product

Resources

About