Investigation of non volatile resistive switching behaviour using rose petal

Rahman, Farhana Yasmin; Sarkar, Surajit; Banik, Hritinava; Uddin, Md. Jashim; Bhattacharjee, D.; Hussain, Syed Arshad

doi:10.1016/j.matpr.2022.05.341

Cited by 2 publications

(2 citation statements)

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“…Literature survey revealed that the data retention time ranges from 120 min to 3.6 × 10 4 minutes as reported by various authors in the case of biobased WORM devices (Table ). , However, for real practical applications, data retention time needs to be increased further. It has been observed that by modifying the device fabrication like insertion of nanomaterials and other external agents, it is possible to enhance the data retention time. , An in-depth study is going on in our laboratory in this direction.…”

Section: Resultsmentioning

confidence: 99%

“…It is interesting to note that, several biocompatible as well as natural materials (plant extract) have already showed excellent performance as RS devices. , A number of biomaterials, viz., proteins, cellulose, biopolymers, polysaccharides, natural plant extracts, glucose, chitosan, and so forth, have been reported to show excellent RS behaviors with a wide variety of memory applications . In addition to biocompatibility, biobased RS devices may be utilized to realize biorealistic synaptic devices for neuromorphic computation applications .…”

Section: Introductionmentioning

confidence: 99%

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Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Banik,

Sarkar,

Bhattacharjee

et al. 2023

ACS Omega

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Biocompatibility and transient nature of electronic devices have been the matter of attention in recent times due to their immense potential for sustainable solutions toward hazardous e-wastes. In order to fulfill the requirement of high-density data-storage devices due to explosive growth in digital data, a resistive switching (RS)-based memory device could be the promising alternative to the present Si-based electronics. In this research work, we employed a biocompatible enzymatic protein lysozyme (Lyso) as the active layer to design a RS memory device having a device structure Au/Lyso/ITO. Interestingly the device showed transient, WORM memory behavior. It has been observed that the WORM memory performance of the device was very good with high memory window (2.78 × 10 2 ), data retention (up to 300 min), device yield (∼73.8%), read cyclability, as well as very high device stability (experimentally >700 days, extrapolated to 3000 days). Bias-induced charge trapping followed by conducting filament formation was the key behind such switching behavior. Transient behavior analysis showed that electronic as well as optical behaviors completely disappeared after 10 s dissolution of the device in luke warm water. Cytotoxicity of the as-prepared device was tested by challenging two environmentally derived bacteria, S. aureus and P. aeruginosa, and was found to have no biocidal effects. Hence, the device would cause no harm to the microbial flora when it is discarded. As a whole, this work suggests that Lyso-based WORM memory device could play a key role for the design of transient WORM memory device for sustainable electronic applications.

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