2016
DOI: 10.1007/s10894-016-0060-7
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Investigation of Nimonic Alloy: Plasma Interaction in Different Plasma Pulses Using a Small Plasma Focus Device

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Cited by 4 publications
(2 citation statements)
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“…Progress in such research has stimulated ion-beam emission studies in areas of material science, the ion-beam source motivating research applications in for instance surface modification [ 32 , 33 ], ion implantation [ 34 , 35 ], thin-film deposition [ 36 , 37 ], semiconductor doping [ 38 ], synthesis of nanoparticles [ 39 ], amorphization of silicon [ 40 ], Nanostructuring of FePt thin films [ 41 ] and formation of nanoparticle [ 42 ]. While many ion-beam measurement and diagnostic techniques have been developed, most particularly in seeking to characterize ion-beam emission, challenges continue to remain in clarifying the various emission complexities.…”
Section: Introductionmentioning
confidence: 99%
“…Progress in such research has stimulated ion-beam emission studies in areas of material science, the ion-beam source motivating research applications in for instance surface modification [ 32 , 33 ], ion implantation [ 34 , 35 ], thin-film deposition [ 36 , 37 ], semiconductor doping [ 38 ], synthesis of nanoparticles [ 39 ], amorphization of silicon [ 40 ], Nanostructuring of FePt thin films [ 41 ] and formation of nanoparticle [ 42 ]. While many ion-beam measurement and diagnostic techniques have been developed, most particularly in seeking to characterize ion-beam emission, challenges continue to remain in clarifying the various emission complexities.…”
Section: Introductionmentioning
confidence: 99%
“…In the X‐ray diffraction (XRD) pattern of the surface of p‐AlGaN after the PEBD process (Figure b), a new diffraction peak is observed at 2 θ = 91.34°, not observed in the XRD pattern of p‐AlGaN before the PEBD process. The new peak is assigned to the (0004) facet of Ni 3 N, suggesting that a new structure of Ni 3 N is formed between Ni:AlN and p‐AlGaN. This is an important clue for the understanding of the Ohmic contact between the Ni:AlN and p‐AlGaN layers.…”
Section: Resultsmentioning
confidence: 82%