Investigation of Mg doping in high-Al content p-type AlxGa1−xN (0.3&amp;lt;x&amp;lt;0.5)

Jeon, Seong Ran; Ren, Zhengru; Cui, G.; Su, Jie; Gherasimova, M.; Han, Jung; Cho, Hyung Koun; Zhou, L.

doi:10.1063/1.1867565

Cited by 78 publications

(50 citation statements)

References 10 publications

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“…Most of the investigations focus on p-type AlGaN epilayers with an Al fraction that is less than 20%. Recently, Jeon et al [13] reported that the viability of low resistivity p-AlGaN doping is constrained by two competing mechanisms, namely, a minimum dosage of Mg acceptors required to overcome the background defects and an incorporation ceiling above which structural defects occur.…”

Section: Introductionmentioning

confidence: 99%

MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35

Yu¹,

Ulker²,

Özbay³

2006

Journal of Crystal Growth

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We present a study on the high performance p-type Al x Ga 1Àx N (x ¼ 0:35) layers grown by low-pressure metalorganic chemical vapor deposition on AlN template/sapphire substrate. The influence of growth conditions on the p-type conductivity of the Al x Ga 1Àx N (x ¼ 0:35) alloy is investigated. From the Hall effect and I-V transmission line model measurements, a p-type resistivity of 3.5 O cm for Al x Ga 1Àx N (x ¼ 0:35) epilayers are achieved. To the best of our knowledge, this is the lowest resistivity ever measured for the uniform p-type AlGaN with Al fraction higher than 0.3. The Mg and impurities (O, C and H) of the atom concentration in the epi-layers are analyzed by means of SIMS depth profiles, which reveal the dependence of impurities incorporation on the III elements and growth temperature. r

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Section: Introductionmentioning

confidence: 99%

MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35

Yu¹,

Ulker²,

Özbay³

2006

Journal of Crystal Growth

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“…At Al contents of x~0.45 a low resistivity of 8 Ω cm was obtained [69] at room temperature whereas at higher Al-content x~0.7 the resistivity increased to 100 000 Ω cm [112]. Recently a low resistivity of 47 Ω cm was reported for Al 0.7 Ga 0.3 N [114] indicating that there is a very narrow growth window for p-type doping at this Al contents.…”

Section: Mg Doping Of Alganmentioning

confidence: 98%

“…High Al-content p-type conductive Al x Ga 1-x N and AlN using Mg have been reported [10,108,69,[112][113][114]. At Al contents of x~0.45 a low resistivity of 8 Ω cm was obtained [69] at room temperature whereas at higher Al-content x~0.7 the resistivity increased to 100 000 Ω cm [112].…”

Section: Mg Doping Of Alganmentioning

confidence: 99%

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Doping of high-Al-content AlGaN grown by MOCVD

Nilsson¹

2014

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The high-Al-content Al x Ga 1-x N, x > 0.70, is the principal wide-band-gap alloy system to enable the development of light-emitting diodes operating at the short wavelengths in the deep-ultraviolet, λ < 280 nm. The development of the deep-ultraviolet light-emitting diodes (DUV LEDs) is driven by the social and market impact expected from their implementation in portable units for water/surface disinfection and based on the damaging effect of the deep-ultraviolet radiation on the DNA of various microorganisms. Internationally, intense research and technology developments occur in the past few years, yet, the external quantum efficiency of the DUV LEDs is typically below 1%.One of the main material issues in the development of the DUV LEDs is the achievement of n-and ptype high-Al-content Al x Ga 1-x N layers with low resistivity, which is required for the electrical pumping of the diodes. The doping process becomes significantly more complex with increasing the Al content and the electrical resistivity is as high as 10 1 -10 2 Ω . cm for n-type AlN doped by silicon, and 10 7 -10 8 Ω cm for p-type AlN doped by magnesium.The present study was therefore focused on gaining a better understanding of the constraints in the doping process of the high-Al-content Al x Ga 1-x N alloys, involving mainly silicon. For this purpose, the epitaxial growth of the high-Al-content Al x Ga 1-x N and AlN by implementing the distinct hot-wall MOCVD was developed in order to achieve layers of good structural and morphological properties, and with low content of residual impurities, particularly oxygen and carbon. Substitutional point defects O N and C N may have a profound impact on the doping by their involvement in effects of ntype carrier compensation. The process temperature was varied between 1000 and up to 1400 °C, which is a principal advantage in order to optimize the material properties of the high-Al-content Al x Ga 1-x N and AlN. The epitaxial growth of the high-Al-content Al x Ga 1-x N and AlN was largely performed on 4H-SiC substrates motivated by (i) the lattice mismatch of ~ 1% along the basal plane (the smallest among other available substrates including Si and sapphire), (ii) the good thermal conductivity of 3.7 W cm -1 K -1 , which is essential to minimize the self-heating during the operation of any light-emitting diode, and (iii) the limited access to true-bulk AlN wafers. The outcome of this study is accordingly summarized and presents our understanding for (i) the complex impact of silicon and oxygen on the n-type conductivity of Al 0.77 Ga 0.23 N, representative for the alloy composition at which a drastic reduction of the n-type conductivity of Al x Ga 1-x N is commonly reported (paper 1); (ii) the strain and morphology compliance during the intentional iv doping by silicon and magnesium, and its correlation with the resistivity of highly doped layers of Al 0.82 Ga 0.18 N alloy composition (paper2); (iii) the n-type conductivity of highly Si-doped Al 0.72 Ga 0.28 N as bound by the process temperature (p...

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“…Recently, Jeon et al [13] reported p-type resistivity as low as 10 Ω cm in AlGaN epitaxial layers with an Al content of 0.3. The electrical characteristics of group III nitride epitaxial films are sensitive to the MOCVD growth conditions.…”

Section: Introductionmentioning

confidence: 99%

Mg‐doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition

Strupiński

Bütün

et al. 2006

Physica Status Solidi (a)

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The growth of high-performance Mg-doped p-type Al x Ga 1-x N (x = 0.35) layers using low-pressure metalorganic chemical vapour deposition on an AlN/sapphire template is reported. The influence of growth conditions on the p-type conductivity of the Al x Ga 1-x N (x = 0.35) alloy was investigated. It was found that the p-type resistivity of the AlGaN alloy demonstrates a marked dependence on the Mg concentration, V/III ratio and group III element flow rate. A minimum p-type resistivity of 3.5 Ω cm for Al x Ga 1-x N (x = 0.35) epilayers was achieved. A Ni/Au (10 nm/100 nm) ohmic contact was also fabricated and a specific contact resistivity of 8.1 × 10 -2 Ω cm 2 was measured.

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Investigation of Mg doping in high-Al content p-type AlxGa1−xN (0.3<x<0.5)

Cited by 78 publications

References 10 publications

MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35

MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35

Doping of high-Al-content AlGaN grown by MOCVD

Mg‐doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition

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