2011
DOI: 10.1016/j.jcrysgro.2010.12.048
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Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE

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“…quantum dot layers, 10 superlattices, 11 and dilute nitrides layers with lattice hardening effects. 12,13 Further improvement of the quality of metamorphic buffer layers is desired for high performance metamorphic optoelectronic devices.…”
mentioning
confidence: 99%
“…quantum dot layers, 10 superlattices, 11 and dilute nitrides layers with lattice hardening effects. 12,13 Further improvement of the quality of metamorphic buffer layers is desired for high performance metamorphic optoelectronic devices.…”
mentioning
confidence: 99%