Investigation of metal-insulator-semiconductor diode with alpha-Ga2O3 insulating layer by liquid phase deposition

Hsieh, Yi Shu; Li, Chien Yu; Lin, Chang Min; Wang, Na Fu; Li, Jian V.; Houng, Mau Phon

doi:10.1016/j.tsf.2019.06.044

Cited by 13 publications

(4 citation statements)

References 27 publications

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“…To date, dislocation density less than 10 3 cm –2 was achieved in β-Ga 2 O 3 , which is low enough to be suitable for power device applications, while in the α phase, the dislocation density is very high, greater than 10 6 cm –2 , due to large lattice mismatch and large thermal expansion coefficient mismatch that have yet to be reduced. Though fabrication of Schottky barrier diodes (SBDs), field-effect transistors (FETs), and solar-blind photodetectors has been reported with α-Ga 2 O 3 using Ti as ohmic contact and PtO x , AgO x , Ni, and Pt as Schottky contacts, − much more attention has been focused on β-Ga 2 O 3 due to its stability. At present, the only commercial Ga 2 O 3 device is a SBD manufactured by Flosfia, Inc., of Japan using mist chemical vapor deposition (CVD) produced α-Ga 2 O 3 . , In this review, we focus on the literature related to β-Ga 2 O 3 based metal–semiconductor structures.…”

Section: Introductionmentioning

confidence: 99%

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

Sheoran

Kumar

Singh

2022

ACS Appl. Electron. Mater.

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Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect transistors (FETs). This is due to its excellent material properties such as ultrawide bandgap of 4.6–4.9 eV, high breakdown electric field of 8 MV/cm, very high Baliga’s figure of merit (BFOM) and mature technology for large bulk single crystals, and epitaxial techniques with controllable n-type doping. Ohmic and rectifying metal–semiconductor contacts on β-Ga2O3 have been developed over the past decade. This work comprehensively reviews the recent development of metal–semiconductor contacts on β-Ga2O3. We start with basic concepts of metal–semiconductor contacts, which is followed by summarizing the current literature on ohmic and Schottky contacts on β-Ga2O3. Finally, the status of high-power Schottky diode contact on β-Ga2O3 is presented.

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Section: Introductionmentioning

confidence: 99%

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

Sheoran

Kumar

Singh

2022

ACS Appl. Electron. Mater.

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“…25 − 31 The conventional Ga 2 O 3 Schottky junction devices were studied with metal electrodes such as Au, Pt, and Ni, taking into account the metals’ appropriate work function. 32 , 33 Again, studies on metal–insulator–semiconductor (MIS)-based SBD devices have been conducted, owing to the benefit of lowering the reverse saturation current. 34 − 36 The MIS-based SBD devices have been fabricated using insulating dielectric materials, such as SiO 2 , Si 3 N 4 , Al 2 O 3, and so forth.…”

Section: Introductionmentioning

confidence: 99%

“…The heterojunction and Schottky junction-based β-Ga 2 O 3 devices are of great interest for the development of high-voltage devices and solar-blind UV photodetectors, considering the intrinsic n-type conductivity of β-Ga 2 O 3 in the presence of unintentional dopants. − The conventional Ga 2 O 3 Schottky junction devices were studied with metal electrodes such as Au, Pt, and Ni, taking into account the metals’ appropriate work function. , Again, studies on metal–insulator–semiconductor (MIS)-based SBD devices have been conducted, owing to the benefit of lowering the reverse saturation current. − The MIS-based SBD devices have been fabricated using insulating dielectric materials, such as SiO 2 , Si 3 N 4 , Al 2 O 3, and so forth. − , The thermal stability of Ga 2 O 3 Schottky contacts is also an important aspect, for which materials with high melting temperatures and low reactivity with Ga 2 O 3 are of significant interest . Furthermore, controlling near-surface ion damage during sputtering deposition of a barrier layer/insulating dielectric , is required.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Vertical Ga₂O₃ Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film

et al. 2022

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We present the device properties of a nickel (Ni)–gallium oxide (Ga 2 O 3 ) Schottky junction with an interfacial hexagonal boron nitride (hBN) layer. A vertical Schottky junction with the configuration Ni/hBN/Ga 2 O 3 /In was created using a chemical vapor-deposited hBN film on a Ga 2 O 3 substrate. The current–voltage characteristics of the Schottky junction were investigated with and without the hBN interfacial layer. We observed that the turn-on voltage for the forward current of the Schottky junction was significantly enhanced with the hBN interfacial film. Furthermore, the Schottky junction was analyzed under the illumination of deep ultraviolet light (254 nm), obtaining a photoresponsivity of 95.11 mA/W under an applied bias voltage (−7.2 V). The hBN interfacial layer for the Ga 2 O 3 -based Schottky junction can serve as a barrier layer to control the turn-on voltage and optimize the device properties for deep-UV photosensor applications. Furthermore, the demonstrated vertical heterojunction with an hBN layer has the potential to be significant for temperature management at the junction interface to develop reliable Ga 2 O 3 -based Schottky junction devices.

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“…A difícil filtragem nos ensaios ocorreu devido ao material gelatinoso formado na precipitação. De acordo com Hsieh et al,(2019), em temperaturas inferiores a 60°C e pH menor que 6 ocorre a formação de uma substancia coloidal de Ga(OH)3. A 60°C por meio de MEV-EDS os autores constataram a formação de cristais de GaOOH, junto a colóides de Ga(OH)3, ainda não dissociados.…”

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Reciclagem de LED: recuperação de gálio por rota hidrometalúrgica.

Vinhal

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RESUMOOs LEDs (Light Emitting Diodes) são dispositivos essenciais em diversas tecnologias, como lâmpadas, smartphones, televisores e telas. Ao longo dos anos, para suprir a demanda, observou-se uma alta na produção dos LEDs e por consequência um aumento na geração do resíduo. O resíduo de LED é uma fonte com potencial para a recuperação de metais críticos como o Ga. A literatura tem reportado a extração do metal principalmente a partir do semicondutor GaN, e ignorado a sua presença em outras fases e componentes do LED. Dessa forma, este trabalho teve como objetivo propor uma rota hidrometalúrgica para a recuperação do gálio a partir dos dispositivos LED. Para isso, buscou-se avaliar e otimizar as etapas de extração e purificação do metal. O desenvolvimento desse trabalho ocorreu através da caracterização dos dispositivos, ensaios preliminares de lixiviação com pré-tratamento químico e térmico, lixiviação, purificação com resinas de troca iônica, precipitação e calcinação. Observou-se na caracterização, que o LED BQ (branco quente) possui maior concentração de Ce, Ga e Y frente aos modelos BF (branco frio) e VER (vermelho). No modelo BQ, além do Ga no material semicondutor (GaN e InGaN), observou-se o metal nas partículas de material luminescente (Y3Al3Ga2O12:Ce), também conhecidas como fósforo. Ademais, foi observado no modelo branco quente um maior número de partículas de fósforo, justificando os maiores teores de Ce, Ga, e Y. Por essa razão, o dispositivo BQ foi selecionado para o estudo de recuperação do Ga. O pré-tratamento térmico utilizando NaOH como fundente se destacou em relação a máxima extração do metal. Isso porque a estrutura cristalina dos fósforos foi atacada pelo fundente, formando a fase lixiviável NaGaO2. A relação LED/NaOH no pré-tratamento foi a variável avaliada que mais influenciou no processo de lixiviação do Ga. Assim, a extração ótima do Ga ocorreu com o prétratamento dos dispositivos na relação LED/NaOH de 1/1,5, 500°C e 3h, seguido da lixiviação com água na relação S/L de 1/5, 4h, e 25°C. O processo extraiu 87,5±2,7% de Ga. Na purificação, o Ga foi concentrado e separado dos principais contaminantes (Al, Si e Sn) utilizando resina de grupo funcional amidoxima. Por fim, o metal foi precipitado na forma de Ga(OH)3 e calcinado para a obtenção de Ga2O3 com 95% de pureza. A recuperação global de Ga pela rota proposta foi de 84%.

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Investigation of metal-insulator-semiconductor diode with alpha-Ga2O3 insulating layer by liquid phase deposition

Cited by 13 publications

References 27 publications

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

Characteristics of Vertical Ga₂O₃ Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film

Reciclagem de LED: recuperação de gálio por rota hidrometalúrgica.

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Investigation of metal-insulator-semiconductor diode with alpha-Ga2O3 insulating layer by liquid phase deposition

Cited by 13 publications

References 27 publications

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications

Characteristics of Vertical Ga2O3 Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film

Reciclagem de LED: recuperação de gálio por rota hidrometalúrgica.

Contact Info

Product

Resources

About

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

Characteristics of Vertical Ga₂O₃ Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film