Investigation of Magnetoelectric Effect in the Bi-Layer Plate Structure

Saengow, Treetep; Satitchantrakul, Thanatcha; Silapunt, Rardchawadee

doi:10.4028/www.scientific.net/ssp.280.9

Cited by 3 publications

(2 citation statements)

References 12 publications

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“…Research on magnetoelectric (ME) materials has been growing dramatically owing to the material's potential for high frequency applications such as magnetic sensing in memory or storage devices and current-to-voltage conversion Vopsaroiu et al (2007); Palneedi et al (2006); Choowitsakunlert et al (2014); Nan et al (2008). The ME material is made of multiferroic composites that possess direct and converse ME coupling effects, which are the induction of electric polarization by the magnetic field and the induction of magnetization by the electric field, respectively Palneedi et al (2006); Saengow et al (2018); Wang et al (2010). The ME material can be formed as a single-phase structure or a heterostructure.…”

Section: Introductionmentioning

confidence: 99%

“…There were several studies on developing mathematical models of the ME coefficient of the nano heterostructures with different input-output field orientations and operating modes such as L-T (longitudinal-transverse) and T-T (transverse-transverse) modes with bar and plate structures, respectively Vopsaroiu et al (2007); Saengow et al (2018); Wang et al (2010); Saengow and Silapunt (2020). These models were developed under the low frequency (f!0) approach, to reduce complexity of the modeling Vopsaroiu et al (2007); Saengow et al (2018). It was shown that that the L-T mode bar structure exhibits higher ME coefficient and offers more flexibility in the structure design, compared to the plate structure Saengow and Silapunt (2020).…”

Section: Introductionmentioning

confidence: 99%

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Mathematical modeling of the magnetoelectric effect of the nano bi-layer L-T mode bar structure in high frequency regime

2021

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This paper describes the magnetoelectric (ME) coupling behavior of the nano bi-layer L-T (longitudinal-transverse) mode bar structure through the ME coefficient mathematical model that is developed in high frequency regime. Terfenol-D and Lead Zirconate Titanate (PZT) are used as ferromagnetic (FM) and ferroelectric (FE) layers, respectively. The ME coefficients are determined at different layer thickness ratios and products of the operating frequency (f) and structure length (l). It is found that the ME coefficient and optimal thickness ratio increases and decreases exponentially respectively, with fl. The minimum and maximum peak ME coefficients at fl values of 0.1 and 1,200 respectively, are around 1,756 and 5,617 mV/Oe$$\cdot $$ · cm with the optimal thickness ratio of 0.43 and 0.19, respectively. The ME coupling behavior depends largely on the magnetostrictive effect in the FM layer that is altered by the applied magnetic field and fl. The demonstration as the read sensor for the hard disk drive (HDD) with 2 Tbit/in2 areal density and 190 Oe/bit applied magnetic field shows the output voltage across the FE layer of around 0.43 mV, which is more than sufficient for the raw signal readback.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Mathematical modeling of the magnetoelectric effect of the nano bi-layer L-T mode bar structure in high frequency regime

2021

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A Comparative Investigation of Magnetoelectric Characteristics of Nano Bi-Layer Bar and Plate Structures

Saengow

Silapunt

2020

IOP Conf. Ser.: Mater. Sci. Eng.

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In this paper, the magnetoelectric (ME) characteristics of bar and plate structures of the nano bi-layer ME materials are investigated and compared. The mathematical models of ME coefficients of the nano bi-layer bar and plate structures operated in the longitudinal-transverse (L-T) mode are developed using the constitutive equations and Newton’s second law. The nano bi-layer of interest consists of Terfenol-D and Lead Zirconate Titanate (PZT) as ferromagnetic (FM) and ferroelectric (FE) phases, respectively. In the low frequency regime, the optimal thickness ratios of bar and plate structures that yield maximum ME coefficients are around 0.43 and 0.33, respectively. The optimal thickness ratios are applied in the high frequency regime to obtain the conditions where the maximum ME coefficients can be achieved. It is found that the resonant frequencies of the bar and plate structures decrease exponentially with the bi-layer length and thickness, respectively. The results also indicate that at the same resonant frequency, the dimension of the bar structure is significantly smaller than the plate structure, it thus becomes more preferable for nano scale sensing applications.

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Geometry–Dependent Magnetoelectric and Exchange Bias Effects of the Nano L–T Mode Bar Structure Magnetoelectric Sensor

Saengow

Silapunt

2023

Micromachines

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The geometry–dependent magnetoelectric (ME) and exchange bias (EB) effects of the nano ME sensor were investigated. The sensor consisted of the Longitudinal–Transverse (L–T) mode bi–layer bar structure comprising the ferromagnetic (FM) and ferroelectric (FE) materials and the anti–ferromagnetic (AFM) material. The bi–layer ME coefficient was derived from constitutive equations and Newton’s second law. The trade–off between peak ME coefficient and optimal thickness ratio was realized. At the frequency × structure length = 0.1 and 1200, minimum and maximum peak ME coefficients of the Terfenol–D/PZT bi-layer were around 1756 and 5617 mV/Oe·cm, respectively, with 0.43 and 0.19 optimal thickness ratios, respectively. Unfortunately, the bi-layer could not distinguish the opposite magnetic field directions due to their similar output voltages. PtMn and Cr2O3, the AFM, were introduced to produce the EB effect. The simulation results showed the exchange field starting at a minimum PtMn thickness of 6 nm. Nevertheless, Cr2O3 did not induce the exchange field due to its low anisotropy constant. The tri–layer ME sensor consisting of PZT (4.22 nm)/Terfenol–D (18 nm)/PtMn (6 nm) was demonstrated in sensing 2 Tbit/in2 magnetic bits. The average exchange field of 5100 Oe produced the output voltage difference of 12.96 mV, sufficient for most nanoscale magnetic sensing applications.

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Investigation of Magnetoelectric Effect in the Bi-Layer Plate Structure

Cited by 3 publications

References 12 publications

Mathematical modeling of the magnetoelectric effect of the nano bi-layer L-T mode bar structure in high frequency regime

Mathematical modeling of the magnetoelectric effect of the nano bi-layer L-T mode bar structure in high frequency regime

A Comparative Investigation of Magnetoelectric Characteristics of Nano Bi-Layer Bar and Plate Structures

Geometry–Dependent Magnetoelectric and Exchange Bias Effects of the Nano L–T Mode Bar Structure Magnetoelectric Sensor

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