Investigation of magnetic anisotropy of (Ge,Mn) nanocolumns

Jain, A.; Jamet, M.; Barski, A.; Devillers, Thibaut; Porret, Clément; Bayle–Guillemaud, Pascale; Gambarelli, Serge; Maurel, Vincent; Desfonds, G.

doi:10.1063/1.3505501

Cited by 16 publications

(18 citation statements)

References 24 publications

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“…Such a behaviour has been predicted theoretically and was observed during submonolayer homoepitaxial growth. The simulations of temperature dependence performed by KMC are in good agreement with classical nucleation theory as well as experiments 10,38 or similar simulations. 3,25 However, one should keep in mind that only surface diffusion was taken into account in the present simulations.…”

Section: Resultssupporting

confidence: 83%

The early stage of formation of self-organized nanocolumns in thin films: Monte Carlo simulations versus atomic-scale observations in Ge-Mn

Mouton

Talbot

Pareige

et al. 2014

Journal of Applied Physics

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Formation kinetics of self-organized nanocolumns during epitaxial growth of a thin film composed of immiscible elements (A,B) has been investigated using Kinetic Monte Carlo simulations. Simulated nanostructures show a good agreement with those observed in Ge-Mn using Atom Probe Tomography and Transmission Electron Microscopy. Self organisation is observed although the rigid lattice simulations used do not account for misfit elastic strain. Simulations reveal that the final nanostructure, in term of number density and diameter of nanocolumns, is controlled by the early stages of growth of the film. The influence of both growth temperature and solute concentration on the nanostructure features is discussed in details. V C 2014 AIP Publishing LLC.

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Section: Resultssupporting

confidence: 83%

The early stage of formation of self-organized nanocolumns in thin films: Monte Carlo simulations versus atomic-scale observations in Ge-Mn

Mouton

Talbot

Pareige

et al. 2014

Journal of Applied Physics

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“…In particular, K eff values of 1.4 x 10 6 erg/cm 3 and 4.1 x 10 6 erg/cm 3 have been reported in Ge 3 Mn 5 nanoparticles of similar size (11 nm compared to 5-14 nm) and in Ge 3 Mn 5 nanocolumns (in this case, only the magneto-crystalline contribution is taken into account). 19,20 The magnetic moments at 300 K do not drop to zero, suggesting a high T C of the DMS QDs, as also confirmed by the well-developed hysteresis of the magnetic loop observed at T=300 K.…”

Section: -mentioning

confidence: 54%

Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces

et al. 2017

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A method for the synthesis of room-temperature ferromagnetic dilute semiconductor Ge1-xMnx (5 % < x < 8 %) quantum dots by molecular beam epitaxy by selective growth on hydrogen terminated silicon (100) surface is presented. The functionalized substrates, as well as the nanostructures, were characterized in situ by reflection high-energy electron diffraction. The quantum dots density and equivalent radius were extracted from field emission scanning electron microscope pictures, obtained ex-situ. Magnetic characterizations were performed by superconducting quantum interference device vibrating sample magnetometry revealing that ferromagnetic order is maintained up to room temperature: two different ferromagnetic phases were identified by the analysis of the field cooled – zero field cooled measurements.

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“…7c, d) [73]. This contrasts with the findings of the Grenoble group who report both crystalline nano-columns for the lower temperature growths and amorphous nano-columns for growth temperatures above 150 C [74]. In addition, Bougeard et al find that their nano-columns consist of roughly spherical regions strung together "like a string of pearls" rather than in a regular a more regular columnar structure.…”

Section: Transition Metal Doping Of Germaniummentioning

confidence: 61%

Si-Based Magnetic Semiconductors

DiTusa

2015

Handbook of Spintronics

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The efforts over the past decade to identify and characterize magnetic semiconducting systems that would be compatible with present-day silicon technologies are reviewed. Investigations that have explored transition metal doping of the group IV semiconductors silicon and germanium are discussed along with intermetallic compounds such as silicides and germanides that may play the role of a magnetic semiconducting source of polarized electrons. Thin films and nanostructures of these materials have been grown by a number of synthesis techniques, and the resulting structural properties, including the important issue of homogeneity of dopants, are critically surveyed. The resulting magnetic and carrier transport properties are also reviewed. List of Abbreviations

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Investigation of magnetic anisotropy of (Ge,Mn) nanocolumns

Cited by 16 publications

References 24 publications

The early stage of formation of self-organized nanocolumns in thin films: Monte Carlo simulations versus atomic-scale observations in Ge-Mn

The early stage of formation of self-organized nanocolumns in thin films: Monte Carlo simulations versus atomic-scale observations in Ge-Mn

Growth of room temperature ferromagnetic Ge1-xMnx quantum dots on hydrogen passivated Si (100) surfaces

Si-Based Magnetic Semiconductors

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