Investigation of Low-Temperature Epitaxial Regrowth of Ion-Implanted Amorphous GaAs

Abstract

A detailed description of optical reflectivity technique for monitoring laser‐induced solid phase epitaxial regrowth in real time is given. An example illustrates the use of this technique for the investigation of interface structures. By cooling the sample the epitaxial regrowth of the crystalline/amorphous interface is stopped before the interface reaches the surface. These stages are additionally investigated by TEM‐ and RBS‐studies which illustrate the dependence of the crystalline quality on the regrowth process.