Abstract:Er ions are implanted into the GaN thick films grown by hydride vapor phase epitaxy. The implantation energy is 200 keV and the implantation doses are 1 × 10 13 , 1 × 10 14 , 1 × 10 15 , and 5 × 10 15 atom∕cm 2 , respectively. The effects of the implantation dose and annealing temperature on the GaN band-edge luminescence are investigated. The cathodoluminescence spectra from 82 to 323 K are measured for 1 × 10 15 atom∕cm 2implanted GaN annealed at 1100°C. Luminescence peaks at 356, 362, 376, 390, and 414 nm a… Show more
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