Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation

Kao, Tsung Hsien; Chang, Shoou Jinn; Fang, Yean Kuen; Huang, Po Chin; Wang, Bo Chin; Wu, Ching‐Yi; Wu, Sean

doi:10.1016/j.sse.2015.09.013

Cited by 2 publications

(4 citation statements)

References 15 publications

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“…In the characteristics of 1/f noise in 2D logic devices, researchers generally believe that the normalized drain current noise (A × S ID /I D 2 ) is approximately a constant when V GS equals to V th , and the amplitude of normalized drain current noise (S ID /I D 2 ) is inversely proportional to the area of the device channel [19]. Here, A is the area of the device channel, S ID is the current noise of the drain end, and I D is the current of the drain end.…”

Section: Resultsmentioning

confidence: 99%

“…All of these three kinds of noise have been exploited as entropy source due to its natural randomness, as shown in Figure 2a,b. Compared with thermal noise [16], RTN [17,18], flicker noise [19] has the advantage of high noise density, which is beneficial for the SC application. Thus, it is important to study SNG based on the flicker noise of MOS devices for the industrialization of the SC system.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, it is important to study SNG based on the flicker noise of MOS devices for the industrialization of the SC system. Up to now, most articles focus on how to reduce the flicker noise [19][20][21]. However, for the SC application, it is essential to acquire noise with high density.…”

Section: Introductionmentioning

confidence: 99%

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Systematical Investigation of Flicker Noise in 14 nm FinFET Devices towards Stochastic Computing Application

Dong,

Lai,

Yang

et al. 2023

Micromachines

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Stochastic computing (SC) is widely known for its high error tolerance and efficient computing ability of complex functions with remarkably simple logic gates. The noise of electronic devices is widely used to be the entropy source due to its randomness. Compared with thermal noise and random telegraph noise (RTN), flicker noise is favored by researchers because of its high noise density. Meanwhile, unlike using RRAM, PCRAM and other emerging memory devices as the entropy source, using logic devices does not require any additional process steps, which is significant for industrialization. In this work, we systematically and statistically studied the 1/f noise characteristics of 14 nm FinFET, and found that miniaturizing the channel area of the device or lowering the ambient temperature can effectively increase the 1/f noise density of the device. This is of great importance to improve the accuracy of the SC system and simplify the complexity of the stochastic number generator (SNG) circuit. At the same time, these rules of 1/f noise characteristics in FinFET devices can provide good guidance for our device selection in circuit design.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Systematical Investigation of Flicker Noise in 14 nm FinFET Devices towards Stochastic Computing Application

Dong,

Lai,

Yang

et al. 2023

Micromachines

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“…These single charged traps can induce instability in the operation of the transistor [2], generate RTN in the MOSFET and affect both stability and reliability of MOSFET-based circuits [3,4]. On the other hand, RTN can be used as a tool for analyzing and exploring the defect behavior of the oxide-semiconductor interface of the MOSFET [5,6].…”

Section: Introductionmentioning

confidence: 99%

Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

et al. 2020

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In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors. The influence of these defects with different sizes and shapes on the amplitude of the random telegraph noise (RTN) in Junctionless Fin Field Effect Transistor (FinFET) is modelled and simulated. The RTN amplitude dependence on the number of single charges trapped in a single defect is modelled and simulated too. It is found out that the RTN amplitude in the Junctionless FinFET does not depend on the shape, nor on the size of the single defect area. However, the RTN amplitude in the subthreshold region does considerably depend on the number of single charges trapped in the defect.

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Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation

Cited by 2 publications

References 15 publications

Systematical Investigation of Flicker Noise in 14 nm FinFET Devices towards Stochastic Computing Application

Systematical Investigation of Flicker Noise in 14 nm FinFET Devices towards Stochastic Computing Application

Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

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