1971
DOI: 10.1016/0039-6028(71)90051-3
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Investigation of long-term processes on a real germanium surface

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1972
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Cited by 21 publications
(2 citation statements)
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“…As a result, the Schottky barrier height is enhanced. [ 31,32 ] Moreover, when the RH is continuously increased during the operation of the SM‐TVNG, we still observe the enhancement of the Schottky rectifying behavior in the device, as shown in Figure S3, Supporting Information.…”
Section: Resultsmentioning
confidence: 87%
“…As a result, the Schottky barrier height is enhanced. [ 31,32 ] Moreover, when the RH is continuously increased during the operation of the SM‐TVNG, we still observe the enhancement of the Schottky rectifying behavior in the device, as shown in Figure S3, Supporting Information.…”
Section: Resultsmentioning
confidence: 87%
“…50 It is believed that the surface state density of 4H-SiC increases, the Schottky barrier increases, and the carrier driving force as a result of the built-in electric field increases with the increase of RH, resulting in an increase of the electronic output. 51,52 If the RH surpasses 80%, the surface Schottky barrier becomes extremely high as a result of the filling of vast water vapor and the probability of the electronic transition is reduced; thus, the output is reduced.…”
Section: Resultsmentioning
confidence: 99%