1990
DOI: 10.1007/bf01454211
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Investigation of laser-induced plasma deposition of boron nitride

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Cited by 6 publications
(3 citation statements)
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“…Clusters have been drawing a great deal of attention since clusters link the gap between isolated molecule and bulk material. Clusters containing III−V group elements such as GaAs, BN, AlP, , and InP have been studied extensively due to their distinctive properties as precursors for bulk semiconductors. Among them, GaAs clusters have received much more attention due to the obvious technological importance.…”
Section: Introductionmentioning
confidence: 99%
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“…Clusters have been drawing a great deal of attention since clusters link the gap between isolated molecule and bulk material. Clusters containing III−V group elements such as GaAs, BN, AlP, , and InP have been studied extensively due to their distinctive properties as precursors for bulk semiconductors. Among them, GaAs clusters have received much more attention due to the obvious technological importance.…”
Section: Introductionmentioning
confidence: 99%
“…Many workers have performed experiments to detect various BN cluster ions by applying intense laser to BN powders. B x +1 N x + ( x = 1 − 8) series were detected when the supersonic expansion technique was employed to cool down the generated hot plasma . Roland and Wynne also carried out photoionization and photofragmentation of B x +1 N x ( x = 1 − 8) and found that the abundance of B x +1 N x + increases as the laser intensity increases …”
Section: Introductionmentioning
confidence: 99%
“…4,5 Different techniques have been applied to study boronnitrogen containing molecules. Becker et al 6,7 used laser ionization mass spectrometry to study the formation of B n N m ϩ clusters ions in a laser plasma. They observed that for B n N nϪ1 ϩ and B n N nϪ2 ϩ cluster ions there is an alternating abundance distribution with the higher intensities of the cluster ions with the odd number of atoms.…”
Section: Introductionmentioning
confidence: 99%