Investigation of Ion Channeling and Scattering for Single‐Ion Implantation with High Spatial Resolution

Raatz, Nicole; Scheuner, Clemens; Pezzagna, Sébastien; Meijer, Jan

doi:10.1002/pssa.201970069

Cited by 4 publications

(4 citation statements)

References 53 publications

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“…In these simulations the target material is usually assumed to be amorphous. If the ion travels through a highsymmetry direction of a crystalline material, channeling could occur [17], and the range of the ions is both longer (in average) and more dispersed than in the amorphous case. Channeling can be avoided either by inclining the sample with respect to the beam direction, in a way to avoid implantation through highly symmetric directions, or (for low-energy implantations) by depositing on the sample a thin amorphous metal layer, to make the ions enter the sample through casual directions.…”

Section: Implantation and Post Annealing Implantation Principlesmentioning

confidence: 99%

Creation of Silicon-Vacancy Color Centers in Diamond by Ion Implantation

et al. 2021

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Silicon-vacancy (SiV) centers in diamond are gaining an increased interest for application, such as in quantum technologies and sensing. Due to the strong luminescence concentrated in its sharp zero-phonon line at room temperature, SiV centers are being investigated as single-photon sources for quantum communication, and also as temperature probes for sensing. Here, we discussed strategies for the fabrication of SiV centers in diamond based on Si-ion implantation followed by thermal activation. SiV color centers in high-quality single crystals have the best optical properties, but polycrystalline micro and nanostructures are interesting for applications in nano-optics. Moreover, we discuss the photoluminescence properties of SiV centers in phosphorous-doped diamond, which are relevant for the creation of electroluminescent devices, and nanophotonics strategies to improve the emission characteristics of the SiV centers. Finally, the optical properties of such centers at room and high temperatures show the robustness of the center and give perspectives for temperature-sensing applications.

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Section: Implantation and Post Annealing Implantation Principlesmentioning

confidence: 99%

Creation of Silicon-Vacancy Color Centers in Diamond by Ion Implantation

et al. 2021

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“…To achieve such high location precision, various methods have been investigated to control the position and distance between NV centers in diamond. ,− These methods can be classified into molecular ion implantation, , single-ion implantation via an atomic force microscope (AFM) tip hole, − and ion implantation with a blocking mask. ,− In molecular implantation, an ionized species such as N 2 + or a molecule with multiple nitrogen atoms is implanted into diamond. This method has the advantage of generating closely located NVs with high probability, yet the extent to which scalability can be increased is limited by the number of nitrogen atoms in one molecule.…”

mentioning

confidence: 99%

“…The low average T 2,Hahn value of 4.5 μs is presumably because of the shallow NV implantation effect, which is led by ions being scattered from the remaining e-beam resist layer. This problem can be resolved by using an SOI wafer mask and a transfer method, implantation with the pierced AFM tip method, or combining EBL with a dry-etching process …”

mentioning

confidence: 99%

“…The low average T 2,Hahn value of 4.5 μs is presumably because of the shallow NV implantation effect, 34 which is led by ions being scattered from the remaining e-beam resist layer. This problem can be resolved by using an SOI wafer mask and a transfer method, 13 implantation with the pierced AFM tip method, 19 or combining EBL with a dryetching process. 24 In terms of the precise spin defect generation in a solid-state system, the most important figure of merit is the opening area of ion implantation masks.…”

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confidence: 99%

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Sub-10 nm Precision Engineering of Solid-State Defects via Nanoscale Aperture Array Mask

et al. 2022

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Engineering a strongly interacting uniform qubit cluster would be a major step toward realizing a scalable quantum system for quantum sensing and a node-based qubit register. For a solid-state system that uses a defect as a qubit, various methods to precisely position defects have been developed, yet the large-scale fabrication of qubits within the strong coupling regime at room temperature continues to be a challenge. In this work, we generate nitrogen vacancy (NV) color centers in diamond with sub-10 nm scale precision using a combination of nanoscale aperture arrays (NAAs) with a high aspect ratio of 10 and a secondary E-beam hole pattern used as an ion-blocking mask. We perform optical and spin measurements on a cluster of NV spins and statistically investigate the effect of the NAAs during an ion-implantation process. We discuss how this technique is effective for constructing a scalable system.

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Scalable Atomic Arrays for Spin‐Based Quantum Computers in Silicon

Jakob,

Robson,

Firgau

et al. 2024

Advanced Materials

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Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry‐standard metal‐oxide‐semiconductor (MOS) processes. This applies also to ion‐implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here multiple strategies are demonstrated and integrated to manufacture scale‐up donor‐based quantum computers. 31PF2 molecule implants are used to triple the placement certainty compared to 31P ions, while attaining 99.99% confidence in detecting the implant. Similar confidence is retained by implanting heavier atoms such as 123Sb and 209Bi, which represent high‐dimensional qudits for quantum information processing, while Sb2 molecules enable deterministic formation of closely‐spaced qudits. The deterministic formation of regular arrays of donor atoms with 300 nm spacing is demonstrated, using step‐and‐repeat implantation through a nano aperture. These methods cover the full gamut of technological requirements for the construction of donor‐based quantum computers in silicon.

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Investigation of Ion Channeling and Scattering for Single‐Ion Implantation with High Spatial Resolution

Cited by 4 publications

References 53 publications

Creation of Silicon-Vacancy Color Centers in Diamond by Ion Implantation

Creation of Silicon-Vacancy Color Centers in Diamond by Ion Implantation

Sub-10 nm Precision Engineering of Solid-State Defects via Nanoscale Aperture Array Mask

Scalable Atomic Arrays for Spin‐Based Quantum Computers in Silicon

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