Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor at room temperature

Comparative Studies on InGaP/GaAs Heterostructure-Emitter Bipolar Transistors with Tunneling- and Superlattice-Confinement Structures

“…Similarly, superlatticeemitter bipolar transistors (SEBTs) could maintain the confinement effect and reduce non-radiative recombination cross-section by the resonant tunneling injection. 13,14 Nevertheless, to our knowledge the difference of the two kinds of tunneling devices grown on the identical epitaxial system have not reported up to now.…”

“…On the other hand, the quantum devices with carrier tunneling behavior have attracted significant interest for researcher due to the high-speed conduction and multifunction application. [9][10][11][12][13][14] Among of the quantum devices, tunneling bipolar transistors, taking the advantages of high current handling capability and high current gain, are promising in digital application. HBTs employ a thin tunneling barrier in place of the wide-gap emitter, i.e.…”

Study of Metamorphic Co-Integrated Heterostructure Bipolar and Field-Effect Transistors (BiFETs)

“…InP/InGaAs heterojunction bipolar transistors (HBTs) and heterostructure field-effect transistors (FFETs) have attracted much attention for circuit applications due to the high mobility and saturation velocity of the InGaAs layer. 1,2 In general, attributed to the presence of potential spike at base-emitter (B-E) heterojunction in the HBTs, the large collector-emitter (C-E) offset voltage DV CE resulting from the difference between B-E and base-collector (B-C) turn-on voltages will increase the power consumption in digital circuit applications. 3,4 To reduce the E-B turn-on voltage has being an important issue to reduce the undesirable offset voltage.…”