Investigation of InP etching mechanisms in a Cl2/H2 inductively coupled plasma by optical emission spectroscopy

Gatilova, L.; Bouchoule, S.; Guilet, S.; Chabert, Pascal

doi:10.1116/1.3071950

Cited by 23 publications

(10 citation statements)

References 30 publications

(19 reference statements)

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“…8,9 We have also evidenced that hydrogen addition promotes the deposition of a Si-rich SiO x passivation layer on the etched sidewalls of InP features, and that Cl-and H-containing chemistries, or HBr-containing chemistries are well-suited for smooth and anisotropic etching of this material. 10 This conclusion is supported by other studies devoted to ICP etching of InP with HBr (-O 2 ) or Cl 2 -H 2 -Ar chemistries. 1,3,11,12 In this work we investigate the transfer of a similar InP etching process to an industrial 300-mm diameter CMOS reactor devoted to Si-gate etching for large-scale microelectronics applications.…”

Section: Introductionsupporting

confidence: 60%

“…This result is consistent with our observations that hydrogen addition promotes the deposition of the Si-rich passivation layer on the InP sidewalls. 8,10 On the other hand the etched surface appears to be somewhat rougher with pure HBr. In order to maintain a smooth surface, the Cl 2 /HBr ratio in the reactive gas was fixed close to 20/20 sccm.…”

Section: Etching Process Optimizationmentioning

confidence: 98%

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Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

Bouchoule¹,

Vallier²,

Patriarche³

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested in X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl2-based inductively coupled plasma A Cl 2 -HBr-O 2 /Ar inductively coupled plasma (ICP) etching process has been adapted for the processing of InP-based heterostructures in a 300-mm diameter CMOS etching tool. Smooth and anisotropic InP etching is obtained at moderate etch rate ($600 nm/min). Ex situ x-ray energy dispersive analysis of the etched sidewalls shows that the etching anisotropy is obtained through a SiO x passivation mechanism. The stoichiometry of the etched surface is analyzed in situ using angle-resolved x-ray photoelectron spectroscopy. It is observed that Cl 2 -based ICP etching results in a significantly P-rich surface. The phosphorous layer identified on the top surface is estimated to be $1-1.3-nm thick. On the other hand InP etching in HBr/Ar plasma results in a more stoichiometric surface. In contrast to the etched sidewalls, the etched surface is free from oxides with negligible traces of silicon. Exposure to ambient air of the samples submitted to Cl 2 -based chemistry results in the complete oxidation of the P-rich top layer. It is concluded that a post-etch treatment or a pure HBr plasma step may be necessary after Cl 2 -based ICP etching for the recovery of the InP material.

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Section: Introductionsupporting

confidence: 60%

Section: Etching Process Optimizationmentioning

confidence: 98%

Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

Bouchoule¹,

Vallier²,

Patriarche³

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

Self Cite

View full text Add to dashboard Cite

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“…3(d)). This improvement in verticality could be partly due to the enhanced sidewall passivation provided by H2 and CH4 in the chemistry (20,29). On the other hand, physical sputtering is likely enhanced by the high platen power of the process resulting in more anisotropic etching (18,21).…”

Section: Fin Etchingmentioning

confidence: 99%

(Invited) Towards a Vertical and Damage Free Post-Etch InGaAs Fin Profile: Dry Etch Processing, Sidewall Damage Assessment and Mitigation Options

Peralagu

Ignatova

et al. 2015

ECS Trans.

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Based on current projections, III-Vs are expected to replace Si as the n-channel solution in FinFETs at the 7nm technology node. The realisation of III-V FinFETs entails top-down fabrication via dry etch techniques. Vertical fins in conjunction with high quality sidewall MOS interfaces are required for high-performance logic devices. This, however, is difficult to achieve with dry etching. Highly anisotropic etching required of vertical fins is concomitant with increased damage to the sidewalls, resulting in the quality of the sidewall MOS interface being compromised. In this work, we address this challenge in two stages by first undertaking a systematic investigation of dry etch processing for fin formation, with the aim of obtaining high resolution fins with vertical sidewalls and clean etch surfaces. In the second stage, dry etch process optimisation and post-etch sidewall passivation schemes are explored to mitigate the damage arising from anisotropic etching required for the realisation of vertical fins.

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“…[6][7][8][9] However, these methods are not very effective and unsuitable for a practical molecular beam epitaxy (MBE) growth process used in the preparation of high electron mobility transistor and heterojunction bipolar transistor devices.…”

Section: Introductionmentioning

confidence: 99%

Improvement of the surface quality of semi-insulating InP substrates through a novel etching and cleaning method

Liu

Zhao

Dong

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested in III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface chargeResidual impurities and contamination on semi-insulating (SI) InP wafers are detrimental for epitaxial growth and device performance, especially because residual silicon on an SI-InP wafer surface is electrically active and generates an n-type conduction layer at the interface between the epilayer and the InP substrate. In order to reduce the concentration of Si and improve surface quality, the authors investigate a wet-chemical cleaning process for ready-to-use InP substrates. A novel and practical cleaning process was developed by adding an alkaline solution to the conventional acidic cleaning process. Time-of-flight secondary mass spectrometry, a very powerful analysis technique to characterize surfaces and investigate any organic and inorganic contamination present on the InP surface, was used after the samples were etched under different cleaning processes. The results show that the novel etching process effectively reduces the Si contamination.

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Investigation of InP etching mechanisms in a Cl2/H2 inductively coupled plasma by optical emission spectroscopy

Abstract: Articles you may be interested in X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl2-based inductively coupled plasma

Cited by 23 publications

References 30 publications

Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

(Invited) Towards a Vertical and Damage Free Post-Etch InGaAs Fin Profile: Dry Etch Processing, Sidewall Damage Assessment and Mitigation Options

Improvement of the surface quality of semi-insulating InP substrates through a novel etching and cleaning method

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