2012
DOI: 10.1016/j.jmmm.2011.08.059
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Investigation of induced parallel magnetic anisotropy at low deposition temperature in Ba-hexaferrites thin films

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Cited by 27 publications
(2 citation statements)
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“…The band gap of BGCM is higher than barium hexaferrite (3.18eV) and barium hexaferrite thin films (2.32eV) as reported elsewhere. [37,38] The binding energy of RE-O (RE is the rare earth element) is very high, therefore, incorporation of RE 3+ increases the band gap energy up to some extent. Quantum confinement could play an important role in increase of the band gap.…”
Section: Resultsmentioning
confidence: 99%
“…The band gap of BGCM is higher than barium hexaferrite (3.18eV) and barium hexaferrite thin films (2.32eV) as reported elsewhere. [37,38] The binding energy of RE-O (RE is the rare earth element) is very high, therefore, incorporation of RE 3+ increases the band gap energy up to some extent. Quantum confinement could play an important role in increase of the band gap.…”
Section: Resultsmentioning
confidence: 99%
“…The absorption spectra of Co 1-x Zn x Cr 0.5 Fe 1.5 O 4 (x = 0, 0.2, 0.4, 0.6, 0.8, 1.0) samples that have been recorded in the wavelength range 200-800 nm by ultraviolet Visible Spectroscopy (UV-VIS) spectrometer are shown in Figure 10. The optical band gap energy is calculated using the Tauc relation [28]:…”
Section: Uv-visible Spectral Analysismentioning
confidence: 99%