Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction

Abstract

The ohmic performance of the ITO/ZnO multilayer deposited on n-type GaN layer was investigated. The best thermal annealing condition achieved for ohmic contact was 5 min at 500 °C, in hydrogen ambient. The measured specific contact resistance was 3×10−4 Ω cm2. Ohmic formation mechanisms would be attributed to the ITO/n-ZnO/n-GaN isotype conjunction and the reduction conduction band offset due to the quantum confinement effects in the thin ZnO layer.

Effect of substrate temperature on properties of multilayer thin film based on ZnO and Mo-doped indium oxide

“…Multilayer films have been grown by various deposition techniques such as sputtering [13], rf plasma-assisted laser ablation [14], chemical vapor deposition [15], vacuum thermal evaporation [16], ion-beam sputtering [9] and pulsed laser deposition [17]. The properties of the metal oxides can be modified by growth parameters such as temperature, oxygen pressure, and annealing [18,9].…”

Investigation of Single n-ZnO/i-ZnO/p-GaN-Heterostructed Nanorod Ultraviolet Photodetectors

“…However, since ZnO semiconductor is naturally an n-type semiconductor owing to the compensation effect of shallow donors induced by zinc interstitials or oxygen vacancies [11], [12], it becomes rather difficult to obtain high quality p-type ZnO (p-ZnO) and intrinsic ZnO (i-ZnO) films and nanorods with a reproducible fashion. In the past decades, with the significant progress being achieved in epitaxial growth and ohmic/Schottky contacts [13]- [15], GaN-based semiconductors have already been widely employed in the applications of gas sensors [16], electronic devices [17], and optoelectronics devices [18]. Nevertheless, it is still quite difficult to fabricate GaN-based devices using conventional wet etching process.…”

Direct current magnetron sputter-deposited ZnO thin films

“…he transparent conducting oxides (TCOs), such as tin oxide (SnO 2 ), indium oxide (In 2 O 3 ), indium tin oxide (ITO), zinc oxide (ZnO) and their doped forms, have been widely used as transparent electrodes in emerging optoelectronic devices [1][2][3][4][5][6][7][8]. These transparent electrodes have been widely investigated to obtain high optical transmittance with low resistivity.…”