Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications

Chang, Chia‐Yuan; Hsu, Heng‐Tung; Chang, Edward Yi; Kuo, Chien-I; Datta, Suman; Radosavljević, M.; Miyamoto, Yasuyuki; Huang, Guo-Wei

doi:10.1109/led.2007.906083

Cited by 43 publications

(18 citation statements)

References 14 publications

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“…[1][2][3][4][5] However, these devices present some problems, in particular as the kink effect in the output current-voltage characteristics, caused by impact ionization and the subsequent hole dynamics in the heterostructure. In order to decrease the associated excessive gate leakage current, the conventional Schottky contact has been replaced by an insulated gate ͑by means of a native oxide, which naturally appears after the recess etch step 6 ͒.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

Vasallo

Rodilla

González

et al. 2010

Journal of Applied Physics

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A semiclassical two-dimensional ensemble Monte Carlo simulator is used to perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors ͑HEMTs͒. Kink effect, this is, an anomalous increase in the drain current I D when increasing the drain-to-source voltage V DS , leads to a reduction in the gain and a rise in the level of noise, thus limiting the utility of these devices for microwave applications. Due to the small band gap of InAs, InAs/AlSb HEMTs are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. The results indicate that, when V DS is high enough for the onset of impact ionization, holes thus generated tend to pile up in the buffer ͑at the gate-drain side͒ due to the valence-band energy barrier between the buffer and the channel. Due to this accumulation of positive charge the channel is further opened and I D increases, leading to the kink effect in the I-V characteristics and eventually to the device electrical breakdown. The understanding of this phenomenon provides useful information for the development of kink-effect-free InAs/AlSb HEMTs.

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Section: Introductionmentioning

confidence: 99%

Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

Vasallo

Rodilla

González

et al. 2010

Journal of Applied Physics

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“…The increase in C gs is responsible for most of the degradation of f T [1]. However, f T and f max of the Ir, Pt and Pd samples decrease slightly with rising V DS until V DS exceeds 2 V. These results reveal that a metal with a high work function such as Ir, Pt and Pd can efficiently suppresses impact ionization-induced problems detrimental effects on DC and RF characteristics.…”

Section: Measurement Results and Discussionmentioning

confidence: 82%

“…As the scaling down of silicon based devices reaches its limit, III-V compound semiconductor field effect transistors have been identified as some of the most attractive nanoelectronic devices [1][2][3]. In particular, InP-based high electron mobility transistors (HEMT) exhibit high power, high operating frequency, low distortion, and low noise characteristics [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…In a strong electric field beneath the gate depletion region, the "highly energetic" electrons and holes in the conduction or valence band can collide with each other, creating electron-hole pairs, which are excited to the conduction band. Impact ionization further induces the kink effect, which is a sudden rise in the drain current at a certain drain-to-source voltage that causes high drain conductance and transconductance (Gm) compression, leading to reduced voltage gain and yielding linearity [1,10]. The kink effect corresponds to Schottky characteristics.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals

Chiu

Lin

et al. 2015

Materials Science in Semiconductor Processing

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“…High Electron Mobility Transistors (HEMTs) based on InAs/AlSb heterostructures are being developed for low-power, high-frequency and low-noise applications, given the high mobility of electrons in InAs and their excellent confinement in the channel [1][2][3][4][5]. Nevertheless, they are very susceptible to suffer from impact ionization processes, with the subsequent hole transport in the structure, being both processes implicated in the kink effect.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate

Vasallo

Rodilla

González

et al. 2011

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

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We present a physical analysis of the kink effect in InAs/AlSb High Electron Mobility Transistors (HEMTs) performed by means of a semiclassical 2D ensemble Monte Carlo simulator. InAs-channel HEMTs are very susceptible to suffer from impact ionization phenomena due to the small bandgap of InAs. These processes, jointly with the associated hole transport, are at the origin of the kink effect. When the drain-to-source voltage is high enough for the onset of impact ionization, generated holes tend to accumulate at the gate-drain side of the buffer because of the valence-band energy barrier present between the buffer and the channel. Due to this pile up of positive charge the channel is further opened and the drain current increases, leading to the kink in the I-V characteristics.

show abstract

Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications

Cited by 43 publications

References 14 publications

Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals

Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate

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