Investigation of Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode

Enhancement of hydrogen sensing performance of a GaN-based Schottky diode with a hydrogen peroxide surface treatment

“…For instance, the baseline current of Device A, at a biased voltage of 1 V, increased from 7.1 × 10 −10 to 7 × 10 −8 A as the temperature increased from 300 to 373 K. Thus, the corresponding current variation (hydrogen sensing performance) is suppressed when the temperature is increased. The hydrogen sensing mechanism of Schottky-type diodes has been widely studied and reported [11,12]. Once a hydrogen gas is introduced, the Schottky barrier height B is decreased due to the formation of a hydrogen dipole layer [13].…”

“…Therefore, the less chemisorption of hydrogen molecules results in a reduced sensing response in wet hydrogen atmosphere. A comparison of the hydrogen sensing performance between the studied Device A and previous works [12,16,[25][26][27][28][29][30] is listed in Table 3. Clearly, Device A with an appropriate H 2 O 2 surface treatment shows a significantly improved hydrogen sensing performance including an extremely high sensing response of 1.8 × 10 5 under a 1% H 2 /air gas and a very low detection limit of 0.1 ppm H 2 /air at 300 K.…”

Characteristics of ZnO nanorods-based ammonia gas sensors with a cross-linked configuration

“…Page 6 of 39 A c c e p t e d M a n u s c r i p t 6 The sapphire substrates (a single crystal Al 2 O 3 with a c-axis orientation) were performed by the Standard Cleaning 1 (SC1) of the RCA cleaning process to remove the organic contamination. Therefore, well-aligned ZnO-NRs arrays could be direct grown on the sapphire substrate along the c-axis orientation.…”

“…In past few decades, semiconductor-type sensors for detecting gaseous species have been widely produced and reported [6][7][8][9][10][11][12][13][14][15]. Different material systems and device structures, such as resistor [10], Schottky diode [11], field-effect transistor (FET) [12][13], optical-fiber [14], acoustic wave [15], and YSZ [16] have been reported to fabricate prominent ammonia gas sensors.…”

Hydrogen sensing characteristics of a Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by sensitization, activation, and electroless plating (EP) approaches

“…[1,2]. Moreover, it is well known that the presence of spontaneous and piezoelectric polarizations at the GaN/AlGaN interface allows a large two-dimensional electron gas (2DEG) and remarkable electron transport behavior for heterostructure field-effect transistors (HFETs) [3].…”