2019
DOI: 10.1016/j.ceramint.2019.08.151
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Investigation of high temperature electrical insulation property of MgO ceramic films and the influence of annealing process

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Cited by 24 publications
(6 citation statements)
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“…To ensure the thermocouple fixation in the micro-groove, as well as insulation between the thermocouple and insert material and thermocouple protection from wear and chips, a MgO ceramic adhesive (Resbond 906, Final Advance Materials, Didenheim, France) with a maximum working temperature of 1650 • C was used. The characteristics of MgO, such as high dielectric strength, durability, malleability, quick response to temperature fluctuations, mechanical stability at high temperatures, and extremely high melting point (2852 • C), make it the preferred option for thermocouple insulation material in a multitude of temperature measurement applications [39,40].…”
Section: Embedded Thermocouple Production and Calibrationmentioning
confidence: 99%
“…To ensure the thermocouple fixation in the micro-groove, as well as insulation between the thermocouple and insert material and thermocouple protection from wear and chips, a MgO ceramic adhesive (Resbond 906, Final Advance Materials, Didenheim, France) with a maximum working temperature of 1650 • C was used. The characteristics of MgO, such as high dielectric strength, durability, malleability, quick response to temperature fluctuations, mechanical stability at high temperatures, and extremely high melting point (2852 • C), make it the preferred option for thermocouple insulation material in a multitude of temperature measurement applications [39,40].…”
Section: Embedded Thermocouple Production and Calibrationmentioning
confidence: 99%
“…At elevated temperatures, the insulation resistance of the insulating layer tends to decay exponentially, thus prompting an examination of its impact on measurement errors of the TFSGs . As shown in Figure b, the apparent resistance ( R a ) of the TFSG can be expressed by the shunt circuit law as R a = ( R s × R i )/( R s + R i ), where R s and R i denote the resistance of the sensitive layer and the insulating layer, respectively Figure c demonstrates that the thickness of the deposited insulating layer was approximately 47 μm.…”
Section: Resultsmentioning
confidence: 99%
“…47 As shown in Figure 7b, the apparent resistance (R a ) of the TFSG can be expressed by the shunt circuit law as R a = (R s × R i )/(R s + R i ), where R s and R i denote the resistance of the sensitive layer and the insulating layer, respectively. 48 Figure 7c demonstrates that the thickness of the deposited insulating layer was approximately 47 μm. In order to measure R i , two solder joints were fabricated on the insulating layer, mirroring their prior positions on the sensitive layer.…”
Section: Agpd Tfsg On Metal or Curved Substratesmentioning
confidence: 99%
“…10. MAO coating has good electrical insulation and almost no absorption of electromagnetic waves 55 . As shown in Fig.…”
Section: Absorbing Mechanism Of Organic Composite Coatingmentioning
confidence: 99%