Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs

Faqir, Mustapha; Verzellesi, Giovanni; Meneghesso, G.; Zanoni, Enrico; Fantini, Fausto

doi:10.1109/ted.2008.924437

Cited by 117 publications

(78 citation statements)

References 31 publications

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“…11 They then carried out two-dimensional (2D) numerical device simulations to support this hypothesis. 15 Sometimes, such non-localized trapping effects can even shift the peak of the electroluminescence distribution from the gate edge to the drain edge of an AlGaN/GaN HFET under on-state operation. 16,17 Using cathodoluminescence, Lin et al 18 even directly observed on-stress-induced non-localized degradation in both the source and drain access regions.…”

Section: Introductionmentioning

confidence: 99%

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Hu¹,

Hashizume²

2012

Journal of Applied Physics

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Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors Appl. Phys. Lett. 100, 223504 (2012) Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer Appl. Phys. Lett. 100, 223502 (2012) Charge transport and trap characterization in individual GaSb nanowires J. Appl. Phys. 111, 104515 (2012) The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors Appl. Phys. Lett. 100, 222901 (2012) Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor J. Appl. Phys. 111, 104513 (2012) Additional information on J. Appl. Phys. For AlGaN/GaN heterojunction field-effect transistors, on-state-bias-stress (on-stress)-induced trapping effects were observed across the entire drain access region, not only at the gate edge. However, during the application of on-stress, the highest electric field was only localized at the drain side of the gate edge. Using the location of the highest electric field as a reference, the trapping effects at the gate edge and at the more distant access region were referred to as localized and non-localized trapping effect, respectively. Using two-dimensional-electron-gas sensing-bar (2DEG-sensing-bar) and dual-gate structures, the non-localized trapping effects were investigated and the trap density was measured to be $1.3 Â 10 12 cm À2 . The effect of passivation was also discussed. It was found that both surface leakage currents and hot electrons are responsible for the non-localized trapping effects with hot electrons having the dominant effect. Since hot electrons are generated from the 2DEG channel, it is highly likely that the involved traps are mainly in the GaN buffer layer. Using monochromatic irradiation (1.24-2.81 eV), the trap levels responsible for the non-localized trapping effects were found to be located at 0.6-1.6 eV from the valence band of GaN. Both trap-assisted impact ionization and direct channel electron injection are proposed as the possible mechanisms of the hot-electron-related non-localized trapping effect. Finally, using the 2DEG-sensing-bar structure, we directly confirmed that blocking gate injected electrons is an important mechanism of Al 2 O 3 passivation. V C 2012 American Institute of Physics.

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Section: Introductionmentioning

confidence: 99%

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Hu¹,

Hashizume²

2012

Journal of Applied Physics

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“…Channel temperature is one of the main drivers of degradation in transistors, 2,3 in addition to other factors including electric fields. 4 Maximum power dissipation is often de-rated to keep the peak channel temperature within a safe working limit, ensuring reliability. Accurate channel temperature measurements are therefore crucial in this respect.…”

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confidence: 99%

Diamond micro-Raman thermometers for accurate gate temperature measurements

Simon

Pomeroy

Kuball

2014

Applied Physics Letters

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“…The study on the effect of high electric filed and hot electron on the electrical degradation under applying electrical stress (applied voltage) is studied in details in [12]. It has been demonstrated that an external electrical stress or a voltage, applied on the TLM structure via contacts, can modify the wurtzite crystal structure of III-Nitrides.…”

Section: Ease Of Use Algan/gan Tlm Heterostructures III Simulatimentioning

confidence: 99%

“…In addition, we have observed that, by applying electrical stress (voltage) on the Ohmic contacts, the total polarization value is reduced when compared to the largest contact distance of 18 μm for the 12 μm, 8 μm, and 4 μm TLM structures by 7 %, 10 %, 17%, respectively. This decrease in the total polarization is due to the inverse piezoelectric effect caused by the additional stress induced by the applied electric field on the contacts, which then changes the total polarization in the V. CONCLUSION heterostructure, thus affecting density of a 2DEG in the channel [12][13].…”

Section: Self-heating and Polarization Effectsmentioning

confidence: 99%

Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices

Ahmeda

Ubochi

Kálna

et al. 2017

2017 12th European Microwave Integrated Circuits Conference (EuMIC)

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Abstract-The interplay of self-heating and polarization affecting the current is studied in Al0.32Ga0.68N/AlN/GaN/Al0.1Ga0.9N Transmission Line Model (TLM) heterostructures with a scaled source-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental characteristics using an electro-thermal model. The electro-thermal simulations show hot-spots at the edge of the drain contact due to a large electric field affecting the device reliability. Due to the applied electrical stress, the total polarization, relative to the 18 μm heterostructure, decreases by 7 %, 10 % and 17% during a reduction of the source-to-drain distance to the 12 μm, 8 μm, and 4 μm, respectively, as a result of the additional strain induced by electrical stress. This additional stress on source/drain contacts reduces the polarization at the surface as a result of the inverse piezoelectric effect.

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Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs

Cited by 117 publications

References 31 publications

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Diamond micro-Raman thermometers for accurate gate temperature measurements

Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices

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