Investigation of H2 Plasma Incorporated ALD-TiOx Films as Hole-Selective Passivating Contacts in Crystalline Silicon Solar Cells
Chien-Hsuan Chen,
S. Novia Berriel,
Taylor M. Currie
et al.
Abstract:In this work, we present an integrated method for the deposition of TiO x through introducing H 2 plasma pulses into the atomic layer deposition process. The potential of TiO x films deposited through this process as a hole-selective passivating contact in crystalline silicon solar cells was evaluated in terms of passivation quality, carrier selectivity, electrical properties, and optical performance. The combination of the growth process with post-H 2 plasma treatment yields TiO x films with superior passivat… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.