2007 International Conference on Design &Amp; Technology of Integrated Systems in Nanoscale Era 2007
DOI: 10.1109/dtis.2007.4449524
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Investigation of gate oxide thickness effect on the radiation-induced traps in MOSFET devices using OTCP method

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“…The thickness of the dielectric element can vary from 2 nm in the gate to 1000 nm in the field oxide. Djezzar et al [14] observe how radiation tolerance can be increased by decreasing that thickness from 10 krad with 40 nm to 500 krad with 20 nm.…”
Section: A Review Of Some Tid Radiation Test Results On Cots Componentsmentioning
confidence: 99%
“…The thickness of the dielectric element can vary from 2 nm in the gate to 1000 nm in the field oxide. Djezzar et al [14] observe how radiation tolerance can be increased by decreasing that thickness from 10 krad with 40 nm to 500 krad with 20 nm.…”
Section: A Review Of Some Tid Radiation Test Results On Cots Componentsmentioning
confidence: 99%