Investigation of gap states near conduction band edge in vicinity of interface between Mg-ion-implanted GaN and Al2O3 deposited after ultra-high-pressure annealing
Abstract:The gap states near the conduction band edge (E
C) in the vicinity of the interface between Mg-ion-implanted GaN and Al2O3 deposited after post-implantation annealing were investigated in the range between E
C – 0.15 eV and E
C – 0.45 eV. For this purpose, capacitance–voltage measurements were performed on MOS diodes with the n-type conduction of Mg-implanted GaN maintained by suppressing the dose. Although the gap state density D
T was re… Show more
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