Investigation of gallium oxide thin film hetero-integrated with bulk diamond via atomic layer deposition

Gu, Lin; Ma, Hong-Ping; Li, Yuan; Wang, An-Feng; Chen, Wen-Jie; Tang, Zhuo-Rui; Shen, Yi; Sun, Fang yuan; Zhu, Jing-Tao; Zhang, Qing-Chun

doi:10.1016/j.apsusc.2023.158502

Cited by 5 publications

References 73 publications

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Vacancy Defects Inductive Effect of Asymmetrically Coordinated Single‐Atom Fe─N₃S₁ Active Sites for Robust Electrocatalytic Oxygen Reduction with High Turnover Frequency and Mass Activity

Zhao,

Chen,

et al. 2023

Advanced Materials

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The development of facile, efficient synthesis method to construct low‐cost and high‐performance single‐atom catalysts (SACs) for oxygen reduction reaction (ORR) is extremely important, yet still challenging. Herein, an atomically dispersed N, S co‐doped carbon with abundant vacancy defects (NSC‐vd) anchored Fe single atoms (SAs) is reported and a vacancy defects inductive effect is proposed for promoting electrocatalytic ORR. The optimized catalyst featured of stable Fe─N3S1 active sites exhibits excellent ORR activity with high turnover frequency and mass activity. In situ Raman, attenuated total reflectance surface enhanced infrared absorption spectroscopy reveal the Fe─N3S1 active sites exhibit different kinetic mechanisms in acidic and alkaline solutions. Operando X‐ray absorption spectra reveal the ORR activity of Fe SAs/NSC‐vd catalyst in different electrolyte is closely related to the coordination structure. Theoretical calculation reveals the upshifted d band center of Fe─N3S1 active sites facilitates the adsorption of O2 and accelerates the kinetics process of *OH reduction. The abundant vacancy defects around the Fe─N3S1 active sites balance the OOH* formation and *OH reduction, thus synergetically promoting the electrocatalytic ORR process.

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Vacancy Defects Inductive Effect of Asymmetrically Coordinated Single‐Atom Fe─N₃S₁ Active Sites for Robust Electrocatalytic Oxygen Reduction with High Turnover Frequency and Mass Activity

Zhao,

Chen,

et al. 2023

Advanced Materials

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Modulation of electronic structures and transport properties in 2D TM0.5Ga1.5O3 (TM = Al, Ga, In)

Xi,

Chen,

Cai

et al. 2024

Physics Letters A

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Study of Vacuum Annealing Process of Ga₂O₃/4H-SiC Heterojunction

Shen,

Yuan,

et al. 2023

2023 20th China International Forum on Solid State Lighting &Amp; 2023 9th International Forum on Wide Bandgap Semiconductors (

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Investigation of gallium oxide thin film hetero-integrated with bulk diamond via atomic layer deposition

Cited by 5 publications

References 73 publications

Vacancy Defects Inductive Effect of Asymmetrically Coordinated Single‐Atom Fe─N₃S₁ Active Sites for Robust Electrocatalytic Oxygen Reduction with High Turnover Frequency and Mass Activity

Vacancy Defects Inductive Effect of Asymmetrically Coordinated Single‐Atom Fe─N₃S₁ Active Sites for Robust Electrocatalytic Oxygen Reduction with High Turnover Frequency and Mass Activity

Modulation of electronic structures and transport properties in 2D TM0.5Ga1.5O3 (TM = Al, Ga, In)

Study of Vacuum Annealing Process of Ga₂O₃/4H-SiC Heterojunction

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Investigation of gallium oxide thin film hetero-integrated with bulk diamond via atomic layer deposition

Cited by 5 publications

References 73 publications

Vacancy Defects Inductive Effect of Asymmetrically Coordinated Single‐Atom Fe─N3S1 Active Sites for Robust Electrocatalytic Oxygen Reduction with High Turnover Frequency and Mass Activity

Vacancy Defects Inductive Effect of Asymmetrically Coordinated Single‐Atom Fe─N3S1 Active Sites for Robust Electrocatalytic Oxygen Reduction with High Turnover Frequency and Mass Activity

Modulation of electronic structures and transport properties in 2D TM0.5Ga1.5O3 (TM = Al, Ga, In)

Study of Vacuum Annealing Process of Ga2O3/4H-SiC Heterojunction

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Vacancy Defects Inductive Effect of Asymmetrically Coordinated Single‐Atom Fe─N₃S₁ Active Sites for Robust Electrocatalytic Oxygen Reduction with High Turnover Frequency and Mass Activity

Vacancy Defects Inductive Effect of Asymmetrically Coordinated Single‐Atom Fe─N₃S₁ Active Sites for Robust Electrocatalytic Oxygen Reduction with High Turnover Frequency and Mass Activity

Study of Vacuum Annealing Process of Ga₂O₃/4H-SiC Heterojunction