Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers

Savinov, S. Yu.; Nagaraja, K.K.; Mityagin, Yu. A.; Данилов, П. А.; Kudryashov, S. I.; Ионин, А. А.; Казаков, И. П.; Tsekhosh, V. I.; Khmelnitsky, R. A.; Егоркин, В. И.; Telenkov, M. P.

doi:10.1016/j.optmat.2020.109716

Cited by 1 publication

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“…By using the calculated lattice parameters, the tetragonal strain of the lattice of Ga(As,Bi) layers can be reconstructed. In addition to HR-XRD, the EDS method was used to control the Bi concentration in the GaAs(1-x)Bix layers, which is described in more detail in reference [27].…”

Section: Ii-experimental Detailsmentioning

confidence: 99%

Structural and optical properties of n-type and p-type GaAs_(1−x)Bi _x thin films grown by molecular beam epitaxy on (311)B GaAs substrates

Souza¹,

Alhassan²,

Alotaibi³

et al. 2021

Semicond. Sci. Technol.

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In this paper, we report on the structural and optical properties of n-type Si-doped and p-type Be-doped GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates with nominal Bi content x=5.4%. Similar samples without Bi were also grown for comparison purposes (n-type GaAs and p-type GaAs). X-ray diffraction, micro-Raman at room temperature, and photoluminescence (PL) measurements as a function of temperature and laser excitation power (PEXC) were performed to investigate their structural and optical properties. X-ray diffraction results revealed that the Bi incorporation in both n-type and p-type doped GaAsBi was similar, despite that the samples present remarkable differences in the number of Bi related defects, non-radiative centers and alloy disorder. Particularly, our results evidence that the Birelated defects in n-and p-doped GaAsBi alloys have important impact on the differences of their optical properties.

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Section: Ii-experimental Detailsmentioning

confidence: 99%

Structural and optical properties of n-type and p-type GaAs_(1−x)Bi _x thin films grown by molecular beam epitaxy on (311)B GaAs substrates

Souza¹,

Alhassan²,

Alotaibi³

et al. 2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers

Cited by 1 publication

References 15 publications

Structural and optical properties of n-type and p-type GaAs_(1−x)Bi _x thin films grown by molecular beam epitaxy on (311)B GaAs substrates

Structural and optical properties of n-type and p-type GaAs_(1−x)Bi _x thin films grown by molecular beam epitaxy on (311)B GaAs substrates

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Investigation of GaAsBi epitaxial layers for THz emitters pumped by long-wavelength fiber lasers

Cited by 1 publication

References 15 publications

Structural and optical properties of n-type and p-type GaAs(1−x)Bi x thin films grown by molecular beam epitaxy on (311)B GaAs substrates

Structural and optical properties of n-type and p-type GaAs(1−x)Bi x thin films grown by molecular beam epitaxy on (311)B GaAs substrates

Contact Info

Product

Resources

About

Structural and optical properties of n-type and p-type GaAs_(1−x)Bi _x thin films grown by molecular beam epitaxy on (311)B GaAs substrates

Structural and optical properties of n-type and p-type GaAs_(1−x)Bi _x thin films grown by molecular beam epitaxy on (311)B GaAs substrates