Investigation of flicker noise in silicon diodes under reverse bias

Influence of surface states on the reverse and noise properties of silicon power diodes

“…It can explain the relationship between positively charged traps and transient reverse properties. More detailed analysis described in [4] gives a time dependence of the deviation ΔV BR (3) in comparison with an original value…”

“…Equation 3depicts the decrease of V RB immediately after the interruption of an annealing or after an on-state polarisation during the period smaller than a time constant t. The restoration of V BR to its original value is much longer than a time constant t. The bigger the density of the occupied traps on an n-type surface is, the more significant decrease of V BR can be seen. The influence of positively charged traps on the noise power generated by the tested diode may be expressed according to [5] by means of the Hoog's formula (4). Equation 4is usually expressed for the spectral power density of the noise signal…”

“…This second group of the diodes is most frequently used in industrial welding machines with an important requirement on a long time reliability and lifetime in difficult operating conditions. A simple physical model describing the origin, behaviour and kinetics of the defects located on a p-n junction termination was published in former studies [1,2]. There was demonstrated the inherent relation between the presence of SSS, degradation of a reverse voltage and a flicker noise power.…”

“…In [1] the authors were focused only on the defects induced by SSS. Actual article solves also the question of the behaviour of volume structural defects (VSD).…”

“…A breakdown voltage V BR was more than 2.0 kV and the samples were 5 mm in diameter. Some results were published in [1]. The presented article is focused on welding diodes with the defects in a silicon volume, where V BR is near 0.4 kV and the diameter is 50 mm.…”