Investigation of epitaxial arrangement and electronic structure of a<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">La</mml:mi><mml:mi>@</mml:mi><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">C</mml:mi></mml:mrow><mml:mrow><mml:mn>82</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>film grown on an<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">MoS</mml:

Iizumi, K.; Uchino, Y.; Ueno, K.; Koma, Atsushi; Saiki, Koichiro; Inada, Y.; Nagai, K.; Iwasa, Yoshihiro; Mitani, Tadaoki

doi:10.1103/physrevb.62.8281

Cited by 10 publications

(4 citation statements)

References 13 publications

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“…The vis-NIR spectrum of ScYErN@C 80 shows the absorption onset at ∼755 nm, corresponding to an optical gap at 1.65 eV for this molecule. This value is larger than those of most known endohedral fullerenes, ,− for example, 0.54 eV for La@C 82 , 0.7 eV for Ce@C 82 (I), and 0.7 eV for Pr@C 82 . Therefore, it is safe to classify ScYErN@C 80 as a large band-gap fullerene.…”

Section: Resultsmentioning

confidence: 81%

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C₈₀ Encaging Four Different Atoms: The Synthesis, Isolation, and Characterizations of ScYErN@C₈₀

2006

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The synthesis, isolation, and spectroscopic characterizations of an endohedral fullerene with four heteroatoms encapsulated (ScYErN@C80) are reported for the first time. The isomeric structure and electronic properties of this molecule are studied by various spectrometry methods such as high-performance liquid chromatography (HPLC), laser desorption time-of-flight (LD-TOF) mass spectroscopy, cyclic voltammetry, Fourier transform infrared (FTIR) spectroscopy, and visible-near infrared (vis-NIR) absorption spectroscopy. The carbon cage of ScYErN@C80 is assigned as Ih-C80, and the four-membered ScYErN cluster is suggested to rotate rapidly inside the fullerene cage. Six electrons are transferred from the nuclear cluster ScYErN to the fullerene cage, which leads to a closed-shell electronic structure of the Ih-C80 and results in excellent stability of this molecule.

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Section: Resultsmentioning

confidence: 81%

“…This value is larger than those of most known endohedral fullerenes, 1,31-35 for example, 0.54 eV for La@C 82 , 36 0.7 eV for Ce@C 82 (I), 31 and 0.7 eV for Pr@C 82 . 35 Therefore, it is safe to classify ScYErN@C 80 as a large band-gap fullerene.…”

Section: Resultsmentioning

confidence: 99%

C₈₀ Encaging Four Different Atoms: The Synthesis, Isolation, and Characterizations of ScYErN@C₈₀

2006

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“…Endohedral metallofullerenes have novel properties with potential applications in biomedicine and electronics. − Many studies have been done to elucidate the variation of structural and electronic properties of metallofullerenes when interacting with other compounds or being adsorbed on substrates. − It has been found that the electronic structures at molecular and cluster levels of metallofullerenes could be significantly modified by the substrates. Such knowledge is of importance for building solid-state devices involving single molecules or structured molecular assemblies.…”

Section: Introductionmentioning

confidence: 99%

Scanning Tunneling Microscopy Investigation of Substrate-Dependent Adsorption and Assembly of Metallofullerene Gd@C₈₂ on Cu(111) and Cu(100)

et al. 2011

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The structural and electronic properties of Gd@C82 adsorbed on Cu(111) and Cu(100) surfaces were investigated by scanning tunneling microscopy (STM). STM images showed that the lattice structure of the underlying metal substrates affected the arrangement of the metallofullerene molecules. Preferred adsorption orientations of the molecules were found from STM images with submolecular resolution. Differences in the scanning tunneling spectroscopy of molecules adsorbed on Cu(111) and Cu(100) were observed and attributed to the work function difference between the substrates. In addition, the electronic properties of the fullerene monomer, dimer, and monolayer were characterized and compared, revealing the roles played by the molecule−substrate interaction and the intermolecular interaction.

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“…6 Very recently, Nuttall et al found an op-tical gap of 0.3 eV for La@C 82 based on its UV-VIS-NIR spectrum; 7 this spectrum is consistent with the results of EELS. 8 Transport measurements were performed on a single crystal of La@C 82 by the two-probe method. They showed a semiconducting behavior with an E g of 0.3 eV.…”

Section: Introductionmentioning

confidence: 99%

Structural and electronic properties ofCe@C82

et al. 2003

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X-ray diffraction patterns for a solid sample of Ce@C 82 that contains a mixture of two isomers, I and II, can be indexed in a face-centered cubic lattice with a lattice constant of 15.88͑5͒ Å, while x-ray diffraction patterns for Ce@C 82 isomer I alone indicate a simple cubic lattice with a lattice constant of 15.78͑1͒ Å. Rietveld refinement for the x-ray diffraction pattern of the latter, Ce@C 82 isomer I, has been carried out with a space group of Pa3 . Thin films of Ce@C 82 were first prepared by thermal deposition under ϳ10 Ϫ7 Torr. The Raman spectra for these thin films show a peak ascribable to a Ce-C 82 cage-stretching mode at ϳ160 cm Ϫ1 , implying that the valence of Ce in this structure is ϩ3. This valence of ϩ3 is supported by Ce L III -edge XANES for a thin film of Ce@C 82 . Furthermore, the local structure around the Ce ion could be determined by Ce L III -edge EXAFS for a thin-film. Transport properties of a thin film of Ce@C 82 have been studied by a four-probe method, and these demonstrate a semiconducting behavior with a small gap of 0.4 eV.

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Investigation of epitaxial arrangement and electronic structure of aLa@C82film grown on anMoS

Cited by 10 publications

References 13 publications

C₈₀ Encaging Four Different Atoms: The Synthesis, Isolation, and Characterizations of ScYErN@C₈₀

C₈₀ Encaging Four Different Atoms: The Synthesis, Isolation, and Characterizations of ScYErN@C₈₀

Scanning Tunneling Microscopy Investigation of Substrate-Dependent Adsorption and Assembly of Metallofullerene Gd@C₈₂ on Cu(111) and Cu(100)

Structural and electronic properties ofCe@C82

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Investigation of epitaxial arrangement and electronic structure of aLa@C82film grown on anMoS

Cited by 10 publications

References 13 publications

C80 Encaging Four Different Atoms: The Synthesis, Isolation, and Characterizations of ScYErN@C80

C80 Encaging Four Different Atoms: The Synthesis, Isolation, and Characterizations of ScYErN@C80

Scanning Tunneling Microscopy Investigation of Substrate-Dependent Adsorption and Assembly of Metallofullerene Gd@C82 on Cu(111) and Cu(100)

Structural and electronic properties ofCe@C82

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C₈₀ Encaging Four Different Atoms: The Synthesis, Isolation, and Characterizations of ScYErN@C₈₀

C₈₀ Encaging Four Different Atoms: The Synthesis, Isolation, and Characterizations of ScYErN@C₈₀

Scanning Tunneling Microscopy Investigation of Substrate-Dependent Adsorption and Assembly of Metallofullerene Gd@C₈₂ on Cu(111) and Cu(100)