Investigation of Electric Characteristics of Nanoscale Composite A¹B⁵C⁶ Semiconductors: Experiment and Numerical Simulation

Abstract

Composite semiconductors belonging to the group A 1 B 5 C 6 (Ag 3 SbS 3 , Tl 3 SbS 3 , Ag 3 AsS 3 and others) are seemed to be among the most promising materials for manufacturing detectors of ionizing radiations (γ-Ray Detectors Based on Composite A 1 B 5 C 6 Semiconductors, H. Khlyap et al., MRS Proceed. 792 (2004, R3.4.1). Electric properties of these wide-gap semiconductors are almost not studied. The paper reports first experimental results on electric field-induced effects observed in these nanoscaled semiconductor structures under the room temperature. Bulk materials as well as thin films were studied. The experimental data were analyzed according to the semiclassical theory of tunneling in solids.