2001
DOI: 10.1016/s0040-6090(00)01635-7
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Investigation of ECR plasma uniformity from the point of view of production and confinement

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Cited by 7 publications
(5 citation statements)
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“…The mean ion charge state is high because of the high collision frequency between the electrons and ions. However, the plasma distribution is not very uniform and the electron temperature is larger than that of the ion [23][24][25].…”
Section: Gaseous Plasma Sourcesmentioning
confidence: 99%
“…The mean ion charge state is high because of the high collision frequency between the electrons and ions. However, the plasma distribution is not very uniform and the electron temperature is larger than that of the ion [23][24][25].…”
Section: Gaseous Plasma Sourcesmentioning
confidence: 99%
“…To summarize, the scheme coupled with the utilization of highly efficient ECR sources has resulted in the production of high-volume, relatively high-density plasma (~10 11 cm −3 ), even though ECR sources are not known to scale well with volume [19][20][21][22][23][24][25][26]. This uniform, high-density plasma over a large volume at low power (a few hundred watts per source) can become an efficient plasma processing system in the near future.…”
Section: Discussionmentioning
confidence: 99%
“…Unlike most other configurations [20][21][22][23][24][25][26], the present scheme [27,28] utilizes multiple plasma sources placed on the periphery of a large volume cylindrical chamber of diameter D (figure 1) to produce high-density plasma. In order to distribute the sources, the system has M source planes, each having a suitable number of source ports (4, 6, 8, ..., 2N) located in a symmetric manner on the chamber on which the plasma sources are mounted.…”
Section: The Schemementioning
confidence: 99%
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“…Ions can penetrate the material surface to a depth of from several tens of nm up to as much as about 10 5 nm; the ions are buried in the material to directly change the composition and material structure (ion implantation) or to combine with other species to form thinˆlms (such as ion beam assisted deposition or plasma immersion ion implantation and deposition). Detailed descriptions of these techniques can be found in the literature [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] . This paper will focus on the applications of plasma and ion beam processing to the biomaterialsˆeld.…”
Section: Introductionmentioning
confidence: 99%