Investigation of Double RESURF P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Partial N-GaN Channels

Li, Huan; Bai, Zhiyuan; Yang, Lian

doi:10.1007/s11664-024-10987-0

J. Electron. Mater.

2024

DOI: 10.1007/s11664-024-10987-0

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Investigation of Double RESURF P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Partial N-GaN Channels

Huan Li,

Zhiyuan Bai,

Lian Yang

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Investigation of Double RESURF P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Partial N-GaN Channels

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References 37 publications

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