Investigation of dopant centres dominating the conduction process in the bulk of un-doped GaSb

Abstract

In this paper, first, the theoretical description of the effects of the dopant densities and the activation energies on the ionization densities, the chemical potentials corresponding to each dopant levels, the majority carrier densities and the Fermi-energy levels in one-acceptor-level system, highly compensated system and two-acceptor-level system are described in detail. Upon fitting the theoretical to the experimental results obtained by the temperature-dependent Hall effect measurements for three samples of un-doped GaSb, the dopant densities and the activation energies for a system with different dopants are investigated. The obtained results revealed that the dopant activation energy has less (no) effect on the Fermi-energy level and the majority carrier density in the highest temperature regimes. The doping density has also less (no) effect on the Fermienergy level in the lowest temperature regimes. Finally, fitting of the theoretical to the experimental Hall effect measurements results confirmed the presence of three acceptor and one donor levels dominating the majority carrier densities at different temperature regions in all the samples of un-doped GaSb semiconductor.

A Simple Method to Differentiate between Free‐Carrier Recombination and Trapping Centers in the Bandgap of the p‐Type Semiconductor

“…e interaction among different localized states is also neglected, and only the interaction between each localized state and the two bands (valence and conduction) is considered. e equation governing the ionization density N − a of a shallow acceptor of density N a and ionization energy ΔE a is adopted from our previous work [25]:…”